CYD09S18V18-167BBXI Cypress Semiconductor Corp, CYD09S18V18-167BBXI Datasheet - Page 20

• Manufacturer Part Number: CYD09S18V18-167BBXI
• Description: IC SRAM 9MBIT 167MHZ 256LFBGA
• Manufacturer: Cypress Semiconductor Corp

Specifications of CYD09S18V18-167BBXI

• Format - Memory: RAM
• Memory Type: SRAM - Dual Port, Synchronous
• Memory Size: 9M (512K x 18)
• Speed: 167MHz
• Interface: Parallel
• Voltage - Supply: 1.42 V ~ 1.58 V, 1.7 V ~ 1.9 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 256-LFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Electrical Characteristics
Over the Operating Range (continued)
Document Number: 38-06082 Rev. *J
READY
V
READY V
I
I
I
I
Notes
Parameter
OZ
IX1
IX2
IX3
41. These parameters are met with VIM disabled.
42. The DC specifications are measured under steady state conditions. The AC specifications are measured while switching at speed. AC VIH/VIL in HSTL mode are
OH
measured with 1 V/ns input edge rates
OL
Output HIGH voltage
(V
(V
(V
(V
(V
Output HIGH voltage
(V
(V
(V
(V
(V
Output leakage current
Input leakage current except
TDI, TMS, MRST, PORTSTD
Input leakage current TDI,
TMS, MRST
Input leakage current
PORTSTD
DDIO
DDIO
DDIO
DDIO
DDIO
DDIO
DDIO
DDIO
DDIO
DDIO
= Min, I
= Min, I
= Min, I
= Min, I
= Min, I
= Min, I
= Min, I
= Min, I
= Min, I
= Min, I
Description
OH
OH
OH
OH
OH
O
OL
OL
OL
OL
= 0.12 mA)
= 0.12 mA)
= 0.12 mA)
= 0.15 mA)
= 0.08 mA)
= –24 mA)
= –12 mA)
= –12 mA)
= –15 mA)
= –12 mA)
2.5 V LVCMOS
1.8 V LVCMOS
2.5 V LVCMOS
1.8 V LVCMOS
Configuration
HSTL (AC)
HSTL (AC)
HSTL(DC)
HSTL(DC)
LVTTL
LVTTL
[42]
[42]
[42]
[42]
VDDIO – 0.45
VDDIO – 0.4
VDDIO – 0.5
2.7
2.0
–300
Min
–10
–10
–10
–
–
–
–
–
[41]
[41]
[41]
[41]
[41]
All Speed Bins
Typ
–
–
–
–
–
–
–
–
–
–
–
–
–
–
0.45
0.4
0.4
0.5
0.7
Max
300
10
10
10
–
–
–
–
–
Page 20 of 52
[41]
[41]
[41]
[41]
FullFlex
[41]
Unit
A
A
A
A
V
V
V
V
V
V
V
V
V
V
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