UAA3522 PHILIPS [NXP Semiconductors], UAA3522 Datasheet - Page 19
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UAA3522
Manufacturer Part Number
UAA3522
Description
Low power dual-band GSM transceiver with an image rejecting front-end
Manufacturer
PHILIPS [NXP Semiconductors]
Datasheet
1.UAA3522.pdf
(28 pages)
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Philips Semiconductors
Notes
1. Measured and guaranteed only on UAA3522 evaluation board.
2. The IF output has open collectors which are supplied via external inductors. External resistors are also needed to
3. Value includes losses due to the printed circuit board and balun.
4. Value is guaranteed only for the P
5. For a given RF input power, the value is the difference in the power measured at the IF output when the LNA is
6. This value is guaranteed within the temperature range 10 to +70 C.
7. Voltage gain is defined as the differential baseband output voltage (either at pins IA/IB or pins QA/QB) divided by the
8. Value refers to differential voltage at pins RXIIFA and RXIIFB (1 k input impedance).
9. Value includes printed circuit board and balun losses.
10. R
11. Guaranteed at T
12. With specified LC tuned circuit (33 nH, 15 pF) connected as shown in Fig.4.
13. Defined for the typical input power.
14. Oscillator configured as shown in the evaluation board diagram Fig.7.
2000 Feb 18
handbook, full pagewidth
Low power dual-band GSM transceiver
with an image rejecting front-end
set the output impedance and to match the IF output to the specified load resistance R
switched on and when it is switched off.
differential input voltage at pins RXIIFA and RXIIFB.
REFAGC
= 18 k , 1%.
50
input port
amb
= 30 to +70 C.
BALUN
LOSS
LOW
RXIRFA
RXIRFB
i(LO)
typ.
Fig.3 RF receiver test principle.
RECEIVER
RF
RXOIFA
19
RXOIFB
V CC
Z = 1 k
1 k /50
BALUN
L
(see Fig.3).
Objective specification
output port
UAA3522HL
FCA047
R L
50