UAA3522 PHILIPS [NXP Semiconductors], UAA3522 Datasheet - Page 16

• Manufacturer Part Number: UAA3522
• Description: Low power dual-band GSM transceiver with an image rejecting front-end
• Manufacturer: PHILIPS [NXP Semiconductors]

Philips Semiconductors
2000 Feb 18
R
C
P
S
LO
O
f
R
C
P
S
LO
P
I
G
V
R
N
I
R
SPUR
SPUR
LO
IM
i(RF)(TX)
cp(max)
sweep
G
i
11
i
11
HASE DETECTOR
O
i(pin)
i(pin)
i(pin)
i(pin)
o
o
o(off)
Low power dual-band GSM transceiver
with an image rejecting front-end
FFSET MIXER
PHD
o
SYMBOL
L
L
out
PHD
4fm
8fm
; DCS
input resistance per pin note 13
input capacitance per
pin
input power
input power matching
reverse isolation local
oscillator leakage
TX RF VCO input
frequency
input resistance per pin note 13
input capacitance per
pin
input power
input power matching
reverse isolation local
oscillator leakage
; DCS
charge pump maximum
sink or source current
phase detector gain
phase detector gain
variation
output voltage
output resistance
output noise current
density
VCO sweeping source
current
output resistance to
ground when powered
down
level of spurious signal
at four times the
wanted f
level of spurious signal
at eight times the
wanted f
local oscillator
feedthrough level
image level
BAND
PARAMETER
AND
mod
mod
(
PINS
GSM
signal
signal
TXIRFA
BAND
(
PIN
AND
symmetrical
single-ended
note 1
symmetrical
single-ended
note 1
R = 270 , 1%; V
V
V
20 kHz < f
note 1
V
TX mode disabled
f
f
to 915 MHz; f
to 1785 MHz
at f
at f
mod
o(RF)(GSM)
PHDOUT)
O
O
O
TXIRFB)
RF
RF
=
=
=
= 67.7 kHz;
1
1
; note 1
1
2
2
2
V
V
V
CCPHD
CCPHD
CCPHD
offset
= 880 MHz
CONDITIONS
o(RF)(DCS)
16
< 20 MHz in lock;
; note 11
O
=
1
2
= 1710 MHz
V
CCPHD
1710
2.2
0.5
0.4
MIN.
14.5
11.5
14.5
11.5
20
100
1
100
1
2.4
2
10
0.55
1
TYP.
10
7
15
10
7
15
40
38
1785
2.6
+20
V
200
0.7
Objective specification
5.5
2.5
10
40
5.5
2.5
10
40
48
55
32
35
CCPHD
UAA3522HL
MAX.
0.5 V
pF
dBm
dBm
dB
dBm
MHz
pF
dBm
dBm
dB
dBm
mA
mA/rad
%
k
pA/ Hz
mA
k
dBc
dBc
dBc
dBc
UNIT