UAA3522 PHILIPS [NXP Semiconductors], UAA3522 Datasheet - Page 18

• Manufacturer Part Number: UAA3522
• Description: Low power dual-band GSM transceiver with an image rejecting front-end
• Manufacturer: PHILIPS [NXP Semiconductors]

Philips Semiconductors
2000 Feb 18
V
I
I
V
IF
f
f
V
I
I
V
Frequency dividers
D/D
D/D
D/D
D/D
General IC specification
t
o(cp)
L(cp)(off)
LO(IF)
ph(comp)
o(cp)
L(cp)(off)
ON
N(DCS)
N
fph(comp)(spur)
o(cp)
fph(comp)(spur)
o(cp)
Low power dual-band GSM transceiver
with an image rejecting front-end
SYNTHESIZER
SYMBOL
fLO(RF)
fLO(IF)
fref(RF)
fref(IF)
(
PINS
DCS close-in phase
noise
phase comparator
frequency spurii
breakthrough level
charge pump output
current
charge pump leakage
current in off-state
charge pump output
voltage
IF LO frequency
phase comparator
frequency
close-in phase noise
phase comparator
frequency spurii
breakthrough level
charge pump output
current
charge pump leakage
current in off-state
charge pump output
voltage
RF frequency
programmable divider
ratio
IF frequency
programmable divider
ratio
RF reference frequency
divider ratio
IF reference frequency
divider ratio
switch-on time
IFLOC, IFLOE
PARAMETER
AND
CPOIF)
within the closed-loop bandwidth
P
f
filter closed-loop
bandwidth = 11 kHz
sink or source current; at V
I
within the closed-loop bandwidth
P
f
filter closed-loop
bandwidth = 25 kHz
sink or source current; at V
fixed ratio
90% of the final current
offset
o(cp)
offset
xtal
xtal
= 0 dBm; f
= 0 dBm; f
within specified values
= 200 kHz; second-order loop
= 1 MHz; second order loop
CONDITIONS
18
LO(RF)
LO(IF)
= 400 MHz
= 1.6 GHz
o(cp)
o(cp)
1.8
0.4
380
0.75
0.4
5200
MIN.
5
5
2.2
400
1
1.1
200
65
13
TYP.
79
75
95
75
2.6
+5
V
440
1.35
+5
V
8600
10
Objective specification
74
60
85
60
CC
CC
UAA3522HL
MAX.
0.4
0.4
dBc/Hz
dBc
mA
nA
V
MHz
MHz
dBc/Hz
dBc
mA
nA
V
UNIT
s