UAA3522 PHILIPS [NXP Semiconductors], UAA3522 Datasheet - Page 17

• Manufacturer Part Number: UAA3522
• Description: Low power dual-band GSM transceiver with an image rejecting front-end
• Manufacturer: PHILIPS [NXP Semiconductors]

Philips Semiconductors
2000 Feb 18
RF LO buffer; measured and guaranteed on evaluation board
RF LO
R
C
S
P
IF LO; measured and guaranteed on evaluation board
E
f
V
IF LO buffer; measured and guaranteed on evaluation board
IF
R
C
P
P
RF and IF synthesizer VCOs
R
f
V
R
C
RF
f
f
osc
ref
LO(RF)
ph(comp)
N
f
f
N(GSM)
11
i(LO)
XTERNAL RESONATOR CIRCUIT CONNECTED TO PINS
osc(peak)
i(m)
IF
i(fref)(rms)
i
i
i
i
EFERENCE FREQUENCY INPUT
i
i
Low power dual-band GSM transceiver
with an image rejecting front-end
TROFF
TRON
SOURCE CONNECTED TO PIN
SYMBOL
SYNTHESIZER
SOURCE CONNECTED TO PIN
; GSM
input resistance
input capacitance
input power matching
input power acceptable
from the RF LO source
oscillation frequency
peak voltage excursion
limit at IFLOC
(collector)
phase noise
frequency variation with
supply voltage
(pushing)
frequency variation
between RX on and
RX off (pulling)
input resistance
input capacitance
input power matching
power available from
the IF source
reference frequency
input voltage level
(RMS value)
input resistance
input capacitance
RF LO frequency
phase comparator
frequency
GSM close-in phase
noise
PARAMETER
AND
DCS
IFLOE
(
PIN
MODES
RFLOE (see Fig.7)
REFIN)
(
PINS
note 1
V
f
note 14
see Fig.5
f
within the closed-loop bandwidth
P
offset
ref
CCIFLO
xtal
= 13 MHz
RXIRFA, RXIRFB
= 0 dBm; f
= 400 kHz; f
IFLOC
= 2.8 V; see Fig.5
CONDITIONS
17
AND
LO(RF)
LO(IF)
IFLOE
= 1.1 GHz
AND
= 400 MHz
CPORF)
80
1040
MIN.
1
7
8
50
1
400
50
1
13
10
1
200
TYP.
15
3
15
5
82
2
1.5
10
250
1720
1
Objective specification
10
125
10
2
75
UAA3522HL
MAX.
pF
dB
dBm
MHz
V
dBc/Hz
MHz/V
kHz
pF
dB
dBm
MHz
mV
k
pF
MHz
kHz
dBc/Hz
UNIT