k4t51043qb-gce6 Samsung Semiconductor, Inc., k4t51043qb-gce6 Datasheet - Page 4

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k4t51043qb-gce6

Manufacturer Part Number
k4t51043qb-gce6
Description
512mb B-die Ddr2 Sdram
Manufacturer
Samsung Semiconductor, Inc.
Datasheet
512Mb B-die DDR2 SDRAM
Memory
DRAM
Small Classification
Density and Refresh
Organization
Bank
Part Number Information
Note:
1. Speed bin is in order of CL-tRCD-tRP
Organization
128Mx4
32Mx16
64Mx8
1. SAMSUNG Memory : K
2. DRAM : 4
3. Small Classification
4. Density & Refresh
5. Organization
6. Bank
7. Interface (VDD & VDDQ)
16 : x16
3 : 4 Bank
Q: SSTL-18(1.8V, 1.8V)
04 : x4
08 : x8
51 : 512M 8K/64ms
T : DDR2 SDRAM
K4T51043QB-GCE6
K4T51083QB-GCE6
K4T51163QB-GCE6
K 4 T XX XX X X X - X X
K4T51043QB-GLE6
K4T51083QB-GLE6
K4T51163QB-GLE6
1
DDR2-667 5-5-5
2
3
4
K4T51043QB-GCD5
K4T51083QB-GCD5
K4T51043QB-GLD5
K4T51083QB-GLD5
K4T51163QB-GCD5
K4T51163QB-GLD5
DDR2-533 4-4-4
5
6
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7
8
K4T51043QB-GCCC
K4T51083QB-GCCC
K4T51043QB-GLCC
K4T51083QB-GLCC
K4T51163QB-GCCC
K4T51163QB-GLCC
8. Version
9. Package
10. Temperature & Power
11. Speed
DDR2-400 3-3-3
CC : DDR2-400 3-3-3
D5 : DDR2-533 4-4-4
E6 : DDR2-667 5-5-5
C : (Commercial, Normal)
L : (Commercial, Low)
G : BGA
M : 1st Generation
A : 2nd Generation
B : 3rd Generation
C : 4th Generation
D : 5th Generation
E : 6th Generation
9
10
XX
11
Interface (VDD & VDDQ)
Rev. 0.91 (Sep. 2003)
DDR2 SDRAM
Temperature & Power
Preliminary
Package
Version
Speed

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