k4t51043qb-gce6 Samsung Semiconductor, Inc., k4t51043qb-gce6 Datasheet - Page 25

• Manufacturer Part Number: k4t51043qb-gce6
• Description: 512mb B-die Ddr2 Sdram
• Manufacturer: Samsung Semiconductor, Inc.

512Mb B-die DDR2 SDRAM
Table 2. Full Strength Default Pullup Driver Characteristics
Figure 2. DDR2 Default Pullup Characteristics for Full Strength Output Driver
-100
-120
-20
-40
-60
-80
0
Voltage (V) Minimum (23.4 Ohms)
0.2
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
0.3
0.4
0.5
0.6
-12.1
-14.7
-16.4
-17.8
-18.6
-19.0
-19.3
-19.7
-19.9
-20.0
-20.1
-20.2
-20.3
-20.4
-20.6
-8.5
0.7
0.8
VDDQ to VOUT (V)
0.9
Nominal Default
Low (18 ohms)
1.0
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-11.1
-16.0
-20.3
-24.0
-27.2
-29.8
-31.9
-33.4
-34.6
-35.5
-36.2
-36.8
-37.2
-37.7
-38.0
-38.4
-38.6
1.1
Pullup Current (mA)
1.2
1.3
Nominal Default
High (18 ohms)
1.4
-11.8
-17.0
-22.2
-27.5
-32.4
-36.9
-40.8
-44.5
-47.7
-50.4
-52.5
-54.2
-55.9
-57.1
-58.4
-59.6
-60.8
1.5
1.6
1.7
Maximum (12.6 Ohms)
1.8
1.9
-101.1
-15.9
-23.8
-31.8
-39.7
-47.7
-55.0
-62.3
-69.4
-75.3
-80.5
-84.6
-87.7
-90.8
-92.9
-94.9
-97.0
-99.1
Rev. 0.91 (Sep. 2003)
DDR2 SDRAM
Maximum
Minimum
Nominal
Nominal
Default
Default
High
Low
Preliminary