k4t51043qb-gce6 Samsung Semiconductor, Inc., k4t51043qb-gce6 Datasheet - Page 24

• Manufacturer Part Number: k4t51043qb-gce6
• Description: 512mb B-die Ddr2 Sdram
• Manufacturer: Samsung Semiconductor, Inc.

512Mb B-die DDR2 SDRAM
Table 1. Full Strength Default Pulldown Driver Characteristics
Figure 1. DDR2 Default Pulldown Characteristics for Full Strength Driver
Voltage (V) Minimum (23.4 Ohms)
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
120
100
80
60
40
20
0
0.2
0.3
12.1
14.7
16.4
17.8
18.6
19.0
19.3
19.7
19.9
20.0
20.1
20.2
20.3
20.4
20.6
8.5
0.4
0.5
Pulldow n Current (mA)
0.6
0.7
Nominal Default
Low (18 ohms)
VOUT to VSSQ (V)
0.8
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11.3
16.5
21.2
25.0
28.3
30.9
33.0
34.5
35.5
36.1
36.6
36.9
37.1
37.4
37.6
37.7
37.9
0.9
1.0
1.1
Nominal Default
High (18 ohms)
1.2
11.8
16.8
22.1
27.6
32.4
36.9
40.9
44.6
47.7
50.4
52.6
54.2
55.9
57.1
58.4
59.6
60.9
1.3
1.4
1.5
1.6
Maximum (12.6 Ohms)
1.7
1.8
101.1
15.9
23.8
31.8
39.7
47.7
55.0
62.3
69.4
75.3
80.5
84.6
87.7
90.8
92.9
94.9
97.0
99.1
1.9
Rev. 0.91 (Sep. 2003)
DDR2 SDRAM
Preliminary
Maximum
Minimum
Nominal
Nominal
Default
Default
High
Low