BFG11W Philips Semiconductors, BFG11W Datasheet - Page 8

• Manufacturer Part Number: BFG11W
• Description: NPN 2 GHz power transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
1996 Jun 04
handbook, halfpage
handbook, halfpage
NPN 2 GHz power transistor
V
Fig.7
CE
( )
Z i
= 3.6 V; V
Fig.9
12
10
8
6
4
2
0
1800
Input impedance as a function of frequency
(series components), typical values.
BE
Definition of transistor impedance.
Z i
= 0.65 V; P
1850
x i
r i
L
= 400 mW.
1900
Z L
MBA451
1950
f (MHz)
MGD415
2000
8
handbook, halfpage
V
Fig.8
CE
( )
Z L
= 3.6 V; V
20
16
12
0
1800
8
4
Load impedance as a function of frequency
(series components), typical values.
BE
= 0.65 V; P
1850
R L
X L
L
= 400 mW.
1900
Product specification
1950
BFG11W/X
f (MHz)
MGD416
2000