BFG11W Philips Semiconductors, BFG11W Datasheet - Page 4

• Manufacturer Part Number: BFG11W
• Description: NPN 2 GHz power transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
CHARACTERISTICS
T
APPLICATION INFORMATION
RF performance at T
Ruggedness in class-AB operation
The transistors are capable of withstanding a load mismatch corresponding to VSWR = 8 : 1 through all phases, at rated
output power under pulsed conditions at f = 1.9 GHz: t
V
1996 Jun 04
handbook, halfpage
V
V
V
I
h
C
C
Pulsed, class-AB, < 1 : 2; t
SYMBOL
j
CES
CE
FE
(BR)CBO
(BR)CEO
(BR)EBO
= 25 C unless otherwise specified.
c
re
NPN 2 GHz power transistor
V
= 4.5 V.
CE
(dB)
Fig.3
G p
= 3.6 V; V
8
6
4
2
0
0
collector-base breakdown voltage
collector-emitter breakdown voltage
emitter-base breakdown voltage
collector cut-off current
DC current gain
collector capacitance
feedback capacitance
MODE OF OPERATION
of load power; typical values.
Power gain and efficiency as functions
BE
= 0.65 V; f = 1.9 GHz; < 1 : 8; t
200
G p
s
C
60 C in a common-emitter test circuit.
PARAMETER
400
p
= 5 ms
600
P L (mW)
p
= 1.25 ms.
MGD412
800
90
70
50
30
10
(%)
C
I
I
I
V
V
V
V
C
C
E
CE
CE
CB
CE
p
(GHz)
= 0.1 mA; open collector
= 0.1 mA; open emitter
= 10 mA; open base
1.9
= 1.25 ms, = 1 : 8 at V
= 8 V; V
= 5 V; I
= 3.6 V; I
= 3.6 V; I
f
4
handbook, halfpage
C
BE
V
f
CONDITIONS
2
= 100 mA
E
C
CE
(dBc)
= 1990.1 MHz;
d im
V
Fig.4
3.6
= i
(V)
= 0
= 0; f = 1 MHz
= 3.6 V; I
20
40
60
80
CE
0
e
0
= 0; f = 1 MHz
Two tone intermodulation distortion
and efficiency as functions of average
output power; typical values.
c
= 1 mA; f
(mA)
I
CQ
1
= 1 : 8; t
CE
= 7 V and t
10
1
d im
= 1990.0 MHz;
p
c
= 625 s.
(mW)
400
P
L
20
8
2.5
25
p
MIN.
= 5 ms,
20
Product specification
P o(av) (dBm)
BFG11W/X
(dB)
G
6
p
100
5
4
MAX.
MGD552
= 1 : 2 at
30
(%)
80
60
40
20
0
V
V
V
pF
pF
(%)
UNIT
c
A
60
c