BFG11W Philips Semiconductors, BFG11W Datasheet - Page 5

• Manufacturer Part Number: BFG11W
• Description: NPN 2 GHz power transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
List of components used in test circuit (see Figs 5 and 6)
Notes
1. American Technical Ceramics (ATC) capacitor, type 100A or other capacitor of the same quality.
2. The striplines are on a double copper-clad printed-circuit board with PTFE fibre-glass dielectric
3. Or equivalent (V
1996 Jun 04
C1, C8, C9, C10
C2, C3
C4
C5
C6, C7,
C11, C12, C13
C14, C15
L1
L2
L3
L4
L5
L6
L7
L8
L9
L10
L11, L12
R1
R2
R3
T1
NPN 2 GHz power transistor
COMPONENT
tan
= 0.0019; thickness = 0.64 mm; copper cladding = 35 m.
BE
multilayer ceramic chip capacitor; note 1
multilayer ceramic chip capacitor; note 1
multilayer ceramic chip capacitor; note 1
multilayer ceramic chip capacitor; note 1
multilayer ceramic chip capacitor; note 1
multilayer ceramic chip capacitor; note 1
electrolytic capacitor
stripline; note 2
stripline; note 2
stripline; note 2
stripline; note 2
stripline; note 2
stripline; note 2
stripline; note 2
stripline; note 2
stripline; note 2
stripline; note 2
RF choke
metal film resistor
metal film resistor
metal film resistor
bias transistor
= 0.65 V at T
DESCRIPTION
amb
= 25 C).
5
24 pF
2 pF
1.2 pF
0.2 pF
1.3 pF
10 nF
470 F; 10 V
1 H
78.7
38.3
10
BC548; note 3
VALUE
0.4 W
0.4 W
0.4 W
length 22.5 mm
width 0.9 mm
length 6 mm
width 0.9 mm
length 1 mm
width 0.9 mm
length 2.5 mm
width 0.9 mm
length 4.5 mm
width 0.9 mm
length 24.5 mm
width 0.9 mm
length 20 mm
width 0.9 mm
length 10.5 mm
width 0.9 mm
length 4.4 mm
width 0.4 mm
length 19.7 mm
width 0.4 mm
DIMENSIONS
Product specification
BFG11W/X
CATALOGUE N0.
r
2222 032 14152
4330 030 36301
= 6.15;