BFG11W Philips Semiconductors, BFG11W Datasheet
BFG11W
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BFG11W Summary of contents
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... DISCRETE SEMICONDUCTORS DATA SHEET BFG11W/X NPN 2 GHz power transistor Product specification Supersedes data of September 1995 File under Discrete Semiconductors, SC14 1996 Jun 04 ...
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... MODE OF OPERATION Pulsed, class-AB, < 1996 Jun 04 PINNING - SOT343 PIN 1 collector 2 emitter 3 base 4 emitter handbook, halfpage 4 1 Top view Marking code: S4 Fig.1 Simplified outline (GHz) (V) (mW) 1.9 3.6 400 2 Product specification BFG11W/X DESCRIPTION 3 2 MBK523 (dB) (%) 6 60 ...
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... Fig.2 Transient thermal impedance from junction to soldering point as a function of pulse time; typical values. 1996 Jun 04 CONDITIONS open emitter open base open collector note 1 s CONDITIONS 760 mW; note 1 tot Product specification BFG11W/X MIN. MAX 2.5 V 500 mA 760 mW 65 +150 175 VALUE = 60 C; 150 MGD411 t p ...
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... C (dBc) (%) 600 800 P L (mW 3 1990.1 MHz 1.25 ms. p Fig.4 4 Product specification BFG11W/X MIN 2 MHz (mA) (mW) (dB) 1 400 and ms o(av) (dBm ...
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... BE 1996 Jun 04 DESCRIPTION 1.2 pF 0 470 78.7 38.3 10 BC548; note C). amb 5 Product specification BFG11W/X VALUE DIMENSIONS CATALOGUE N0. length 22.5 mm width 0.9 mm length 6 mm width 0.9 mm length 1 mm width 0.9 mm length 2.5 mm width 0.9 mm length 4.5 mm width 0.9 mm length 24.5 mm width 0.9 mm length 20 mm width 0.9 mm length 10.5 mm width 0.9 mm length 4 ...
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... C1 50 input Fig.5 Common-emitter test circuit for class-AB operation at 1.9 GHz. 1996 Jun C13 L11 R3 C11 C12 L10 C9 C10 L7 DUT C2 Product specification BFG11W C14 C15 L12 output C6, C7 MGD413 ...
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... V bias Dimensions in mm. Fig.6 Component layout for common-emitter test circuit. 1996 Jun 04 Base 70 R2 L11 C11 R3 C12 L10 C10 Base Product specification Collector C14 C15 C13 L12 MGD414 Collector L6 BFG11W/X ...
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... Z L Fig.9 Definition of transistor impedance. 1996 Jun 04 MGD415 handbook, halfpage 1950 2000 f (MHz 3 Fig.8 MBA451 8 Product specification BFG11W 1800 1850 1900 1950 = 0. 400 mW Load impedance as a function of frequency (series components), typical values. ...
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... Philips Semiconductors NPN 2 GHz power transistor PACKAGE OUTLINE handbook, full pagewidth 0 Dimensions in mm. 1996 Jun 04 0 2.2 2 0.7 0.5 1.4 1.2 2.2 1.8 Fig.10 SOT343. 9 Product specification BFG11W/X 1.00 max 0.1 max 0.2 A 1.35 1.15 0.3 0.1 0.25 0.10 B MSB374 ...
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... Philips customers using or selling these products for use in such applications their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1996 Jun 04 10 Product specification BFG11W/X ...
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... Philips Semiconductors NPN 2 GHz power transistor 1996 Jun 04 NOTES 11 Product specification BFG11W/X ...
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... Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905, Tel. +1 800 234 7381, Fax. +1 708 296 8556 Middle East: see Italy For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. + 24825 © Philips Electronics N.V. 1996 All rights are reserved ...