BFG11W Philips Semiconductors, BFG11W Datasheet - Page 3

• Manufacturer Part Number: BFG11W
• Description: NPN 2 GHz power transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
THERMAL CHARACTERISTICS
Note to the Limiting values and Thermal characteristics
1. T
1996 Jun 04
handbook, full pagewidth
V
V
V
I
P
T
T
R
SYMBOL
SYMBOL
C
stg
j
CBO
CEO
EBO
tot
th j-s
NPN 2 GHz power transistor
Z th j-s
(K/W)
Fig.2 Transient thermal impedance from junction to soldering point as a function of pulse time; typical values.
s
10
10
is the temperature at the soldering point of the collector tab.
10
3
2
1
10
6
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
junction temperature
thermal resistance from junction to soldering point
0.75
0.33
0.05
0.02
0.01
PARAMETER
0.5
0.2
0.1
0.1
1
=
10
5
PARAMETER
10
4
open emitter
open base
open collector
up to T
s
CONDITIONS
= 60 C; note 1
10
3
3
up to T
P
tot
= 760 mW; note 1
CONDITIONS
s
10
= 60 C;
2
65
MIN.
P
10
t p
20
8
2.5
500
760
+150
175
1
T
VALUE
MAX.
150
Product specification
BFG11W/X
=
t p (s)
t p
T
t
MGD411
V
V
V
mA
mW
C
C
1
UNIT
UNIT
K/W