BFG11W Philips Semiconductors, BFG11W Datasheet - Page 2

• Manufacturer Part Number: BFG11W
• Description: NPN 2 GHz power transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
FEATURES
APPLICATIONS
DESCRIPTION
NPN silicon planar epitaxial transistor encapsulated in a
plastic 4-pin dual-emitter SOT343 package.
QUICK REFERENCE DATA
RF performance at T
1996 Jun 04
Pulsed, class-AB, < 1 : 2; t
High power gain
High efficiency
Small size discrete power amplifier
1.9 GHz operating area
Gold metallization ensures excellent reliability
Linear and non-linear operation.
Common emitter class-AB operation in handheld radio
equipment at 1.9 GHz such as DECT, PHS.
Driver for DCS 1800.
NPN 2 GHz power transistor
MODE OF OPERATION
s
60 C in a common-emitter test circuit.
p
= 5 ms
(GHz)
1.9
2
f
PINNING - SOT343
handbook, halfpage
Marking code: S4
PIN
1
2
3
4
V
(V)
3.6
CE
Fig.1 Simplified outline.
collector
emitter
base
emitter
(mW)
4
1
Top view
400
P
L
DESCRIPTION
Product specification
3
2
(dB)
MBK523
G
6
BFG11W/X
p
(%)
60
c