TPC8403 Toshiba Semiconductor, TPC8403 Datasheet - Page 8

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TPC8403

Manufacturer Part Number
TPC8403
Description
Field Effect Transistor Silicon P/N Channel MOS Type (P Channel U-MOSII/N Channel U-MOSII)
Manufacturer
Toshiba Semiconductor
Datasheet

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N-channel
100
0.5
0.3
0.1
20
16
12
10
50
30
10
8
6
4
2
0
8
4
0
5
3
1
0.1
0
0
8 V
10 V
0.3
1
0.2
Drain-source voltage V
Gate-source voltage V
6 V
Drain current I
2
1
0.4
4 V
I
I
Common source
Ta = 25°C
Pulse test
|Y
D
D
Ta = −55ºC
fs
– V
– V
3.6 V
| – I
3
3
Ta = −55°C
DS
GS
Ta = 100°C
D
0.6
D
Common source
V DS = 10 V
Pulse test
100ºC
10
GS
4
DS
3.4 V
(A)
Common source
V DS = 10 V
Pulse test
25ºC
(V)
V GS = 2.6 V
(V)
0.8
Ta = 25°C
30
5
3.3 V
3.2 V
3.1 V
2.8 V
2.9 V
3 V
100
1.0
6
8
100
0.6
0.5
0.4
0.3
0.2
0.1
20
16
12
50
30
10
0
8
4
0
5
3
1
0.1
0
0
10 V
6 V
0.3
2
Drain-source voltage V
Gate-source voltage V
1
4 V
8 V
Drain current I
4
1
R
V GS = 10 V
V
V GS = 4.5 V
DS (ON)
2
I
DS
D
– V
– V
3
6
DS
GS
– I
3.8 V
3
D
Common source
Ta = 25°C
Pulse test
D
10
GS
8
DS
(A)
Common source
Ta = 25°C
Pulse test
Common source
Ta = 25°C
Pulse test
3.6 V
3.4 V
(V)
(V)
V GS = 2.6 V
I D = 6 A
4
30
10
3.2 V
3 V
1.5 A
2004-07-06
2.8 V
TPC8403
3 A
100
12
5

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