TPC8403 Toshiba Semiconductor, TPC8403 Datasheet - Page 4

• Manufacturer Part Number: TPC8403
• Description: Field Effect Transistor Silicon P/N Channel MOS Type (P Channel U-MOSII/N Channel U-MOSII)
• Manufacturer: Toshiba Semiconductor

N-channel
Electrical Characteristics
Source-Drain Ratings and Characteristics
Gate leakage current
Drain cut-OFF current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Total gate charge
(gate-source plus gate-drain)
Gate-source charge 1
Gate-drain (“miller”) charge
Drain reverse current
Forward voltage (diode)
Characteristics
Characteristics
Rise time
Turn-ON time
Fall time
Turn-OFF time
Pulse (Note 1)
(Ta = 25°C)
V
V
R
Symbol
Symbol
(BR) DSS
(BR) DSX
DS (ON)
V
Q
I
I
C
I
|Y
C
C
Q
GSS
DRP
DSS
V
t
t
Q
DSF
oss
on
off
gs
rss
t
t
iss
gd
th
fs
r
f
g
1
|
V
V
I
I
V
V
V
V
V
Duty < = 1%, t
V
I
I
D
D
D
DR
V
GS
DS
DS
GS
GS
DS
DS
DD
GS
= 10 mA, V
= 10 mA, V
= 6 A
4
(Ta = 25°C)
= 6 A, V
= 30 V, V
= 10 V, I
= 10 V, I
= 10 V, V
= ±16 V, V
= 4.5 V, I
= 10 V, I
∼ − 24 V, V
10 V
0 V
Test Condition
Test Condition
GS
w
D
D
V
D
GS
GS
GS
D
GS
GS
= 10 µs
DD
= 1 mA
= 3 A
DS
= 3 A
= 0 V
= 3 A
⎯
= 0 V
= −20 V
= 0 V
= 0 V, f = 1 MHz
= 10 V,
∼ − 15 V
= 0 V
I
D
= 3.0 A
R
5.0 Ω
L
V
OUT
=
Min
Min
1.3
3.9
30
15
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Typ.
Typ.
850
180
270
7.8
6.5
⎯
⎯
⎯
⎯
⎯
38
25
11
18
27
17
⎯
⎯
3
4
2004-07-06
TPC8403
Max
Max
−1.2
±10
2.5
10
46
33
24
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Unit
Unit
mΩ
µA
µA
pF
nC
ns
V
V
S
A
V