TPC8403 Toshiba Semiconductor, TPC8403 Datasheet - Page 5

• Manufacturer Part Number: TPC8403
• Description: Field Effect Transistor Silicon P/N Channel MOS Type (P Channel U-MOSII/N Channel U-MOSII)
• Manufacturer: Toshiba Semiconductor

P-channel
−18
−14
−10
100
0.5
0.3
0.1
−5
−4
−3
−2
−1
−6
−2
50
30
10
−0.1
0
0
5
3
1
0
0
Common source
V DS = −10 V
Pulse test
−8 V
−10 V
−0.3
−1
−0.2
Drain-source voltage V
Gate-source voltage V
−6 V
Drain current I
−2
−1
−0.4
−4 V
I
I
|Y
D
D
fs
– V
– V
−3
−3
| – I
−55ºC
−3.2 V
DS
GS
Ta = −55°C
−0.6
D
Ta = 100°C
D
−10
−4
GS
DS
Common source
Ta = 25°C
Pulse test
(A)
−3 V
Ta = 100ºC
25ºC
Common source
V DS = −10 V
V GS = −2.2 V
(V)
(V)
−0.8
25°C
−30
−5
−2.4 V
−2.8 V
−2.6 V
−100
−1.0
−6
5
−0.6
−0.5
−0.4
−0.3
−0.2
−0.1
−10
100
50
30
10
−8
−6
−4
−2
0
−0.1
0
5
3
1
0
0
−0.3
−2
−1
Drain-source voltage V
Gate-source voltage V
−4 V
−10 V
−3.6 V
Drain current I
−6 V
−4
−1
−8 V
R
V
−2
DS (ON)
I
DS
D
V GS = −4.5 V
– V
−3
−6
V GS = −10 V
– V
DS
GS
– I
−3.4 V
−3
D
Common source
Ta = 25°C
Pulse test
D
−3.2 V
−10
−8
GS
DS
(A)
Common source
Ta = 25°C
Pulse test
Common source
Ta = 25°C
Pulse test
I D = −4.5 A
V GS = −2.2 V
(V)
(V)
−4
−30
−10
−2.2 A
−1.3A
−3 V
−2.8 V
−2.6 V
−2.4 V
2004-07-06
TPC8403
−100
−12
−5