TPC8403 Toshiba Semiconductor, TPC8403 Datasheet - Page 3

• Manufacturer Part Number: TPC8403
• Description: Field Effect Transistor Silicon P/N Channel MOS Type (P Channel U-MOSII/N Channel U-MOSII)
• Manufacturer: Toshiba Semiconductor

P-channel
Electrical Characteristics
Source-Drain Ratings and Characteristics
Gate leakage current
Drain cut-OFF current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Total gate charge
(gate-source plus gate-drain)
Gate-source charge 1
Gate-drain (“miller”) charge
Drain reverse current
Forward voltage (diode)
Characteristics
Characteristics
Rise time
Turn-ON time
Fall time
Turn-OFF time
Pulse (Note 1)
(Ta = 25°C)
V
V
R
Symbol
Symbol
(BR) DSS
(BR) DSX
DS (ON)
V
Q
I
I
C
I
|Y
C
C
Q
GSS
DRP
DSS
V
t
t
Q
DSF
oss
on
off
gs
rss
t
t
iss
gd
th
fs
r
f
g
1
|
V
V
I
I
V
V
V
V
V
Duty < = 1%, t
V
I
I
D
D
V
D
DR
GS
DS
DS
GS
GS
DS
DS
DD
GS
= −10 mA, V
= −10 mA, V
= −4.5 A
3
(Ta = 25°C)
= −4.5 A, V
= −30 V, V
= −10 V, I
= −10 V, I
= −10 V, V
−10 V
= ±16 V, V
= −4.5 V, I
= −10 V, I
∼ − −24 V, V
0 V
Test Condition
Test Condition
w
V
DD
D
D
= 10 µs
D
GS
GS
D
GS
GS
GS
DS
GS
= −1 mA
= −2.2 A
⎯
= −2.2 A
= −2.2 A
∼ − −15 V
= 0 V
= 20 V
= 0 V
= 0 V
= 0 V
= 0 V, f = 1 MHz
= −10 V,
I
D
= −2.2 A
R
6.8 Ω
L
V
=
OUT
−1.0
Min
−30
−15
Min
3.1
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Typ.
Typ.
940
270
390
6.2
⎯
⎯
⎯
⎯
⎯
66
45
13
21
25
73
18
⎯
⎯
4
4
2004-07-06
TPC8403
Max
−2.2
Max
±10
−10
−18
1.2
90
55
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Unit
Unit
mΩ
µA
µA
pF
nC
ns
V
V
S
A
V