TPC8403 Toshiba Semiconductor, TPC8403 Datasheet - Page 6

• Manufacturer Part Number: TPC8403
• Description: Field Effect Transistor Silicon P/N Channel MOS Type (P Channel U-MOSII/N Channel U-MOSII)
• Manufacturer: Toshiba Semiconductor

P-channel
10000
1000
100
120
100
1.6
1.2
0.8
0.4
10
80
60
40
20
1
0
−0.1
2
0
−80
0
(1)
(2)
(3)
(4)
−0.3
−40
40
Drain-source voltage V
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
V GS = −4.5 V
Capacitance – V
−1
Device mounted on a glass-epoxy board (
(Note 2a)
Device mounted on a glass-epoxy board
(b) (Note 2b)
0
R
(1) Single-device operation (Note 3a)
(2) Single-device value at dual
(3) Single-device operation (Note 3a)
(4) Single-device value at dual
V GS = −10 V
80
DS (ON)
t = 10 s
P
operation (Note 3b)
operation (Note 3b)
D
−3
40
– Ta
– Ta
I D = −4.5 A
120
−10
80
DS
DS
Common source
Ta = 25°C
f = 1MHz
V GS = 0 V
Common source
Pulse test
C rss
−1.3 A
C iss
−1.3 A
C oss
I D = −4.5 A
(V)
160
−30
120
−2.2 A
−2.2 A
−100
a)
200
160
6
−0.5
−0.3
−0.1
−10
−40
−30
−20
−10
−5
−3
−1
−3
−2
−1
−80
0
0
0
0
Common source
I D = −4.5 A
Ta = 25°C
Pulse test
Dynamic input/output characteristics
V DD = −24 V
−40
0.2
Drain-source voltage V
Ambient temperature Ta (°C)
Total gate charge Q
−10
8
0.4
0
−5
I
V GS
DR
V
th
−3
0.6
40
– V
−1
16
– Ta
DS
g
V GS = 0 V
80
0.8
DS
Common source
Ta = 25°C
Pulse test
Common source
V DS = −10 V
I D = −1 mA
Pulse test
(nC)
24
(V)
120
1.0
2004-07-06
TPC8403
160
1.2
32
16
12
8
4
0