TPC8403 Toshiba Semiconductor, TPC8403 Datasheet

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TPC8403

Manufacturer Part Number
TPC8403
Description
Field Effect Transistor Silicon P/N Channel MOS Type (P Channel U-MOSII/N Channel U-MOSII)
Manufacturer
Toshiba Semiconductor
Datasheet

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Motor Drive Applications
Notebook PC Applications
Portable Equipment Applications
Maximum Ratings
This transistor is an electrostatic-sensitive device. Please handle with caution.
Low drain-source ON resistance:
High forward transfer admittance: P Channel |Y
Low leakage current:
Enhancement mode
: P Channel V
: N Channel V
Drain-source voltage
Drain-gate voltage (R
Gate-source voltage
Drain current
Drain power
dissipation
(t = 10s)
Drain power
dissipation
(t = 10s)
Single pulse avalanche energy
Avalanche current
Repetitive avalanche energy
Single-device value at operation
Channel temperature
Storage temperature range
Note 1, Note 2ab, Note 3ab, Note 4and Note 5: See the next page.
(Note 2a)
(Note 2b)
Characteristics
DC
Pulse
Single-device operation
Single-device value at
dual operation (Note 3b)
Single-device operation
Single-device value at
dual operation (Note 3b)
th
th
= −1.0~−2.2 V (V
= 1.3~2.5 V (V
TOSHIBA Field Effect Transistor Silicon P/N Channel MOS Type
GS
(Note 2a, 3b, 5)
= 20 kΩ)
(Ta = 25°C)
(Note 3a)
(Note 3a)
(Note 1)
(Note 1)
(P Channel U-MOSII/N Channel U-MOSII)
DS
DS
= 10 V, I
P Channel R
N Channel R
N Channel |Y
P Channel I
N Channel I
Symbol
V
V
V
P
P
P
P
= −10 V, I
E
E
T
I
I
T
DGR
GSS
DSS
D(1)
D(2)
D(1)
D(2)
I
DP
AR
AR
stg
D
AS
ch
TPC8403
D
P Channel N Channel
(Note 4a)
= 1 mA)
−4.5
0.75
0.45
26.3
−4.5
−30
−30
±20
−18
D
1.5
1.1
DSS
DSS
DS (ON)
DS (ON)
= −1 mA)
fs
fs
−55~150
Rating
| = 6.2 S (typ.)
| = 7.8 S (typ.)
0.11
= −10 µA (V
150
= 10 µA (V
1
(Note 4b)
= 45 mΩ (typ.)
= 25 mΩ (typ.)
0.75
0.45
46.8
±20
1.5
1.1
30
30
24
6
6
DS
DS
= 30 V)
Unit
mJ
mJ
°C
°C
W
= −30 V)
V
V
V
A
A
Weight: 0.080 g (typ.)
Circuit Configuration
JEDEC
JEITA
TOSHIBA
8
1
N-ch
7
2
2-6J1E
2004-07-06
TPC8403
6
3
P-ch
5
4
Unit: mm

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TPC8403 Summary of contents

Page 1

... GSS −4 − 1.5 1.5 D(1) P 1.1 1.1 D( 0.75 0.75 D(1) P 0.45 0.45 D(2) 26.3 46 (Note 4a) (Note 4b) −4 0. 150 °C ch −55~150 T °C stg 1 TPC8403 Unit: mm JEDEC ― JEITA ― TOSHIBA 2-6J1E Weight: 0.080 g (typ.) Circuit Configuration N-ch P-ch 2004-07-06 ...

Page 2

... Max Single-device operation R 83.3 th (ch-a) (1) (Note 3a) dual operation R 114 th (ch-a) (2) (Note 3b) Single-device operation R 167 th (ch-a) (1) (Note 2a) dual operation R 278 th (ch-a) (2) (Note 2b) b) Device mounted on a glass-epoxy board (b) ( Ω −4 Ω 6 TPC8403 Unit °C/W FR-4 25.4 × 25.4 × 0.8 (Unit: mm) 2004-07-06 ...

Page 3

... −4 (Ta = 25°C) Symbol Test Condition ⎯ I DRP = −4 DSF TPC8403 Min Typ. Max Unit ⎯ ⎯ ±10 µA ⎯ ⎯ −10 µA −30 ⎯ ⎯ V −15 ⎯ ⎯ −1.0 ⎯ −2.2 V ⎯ ...

Page 4

... (Ta = 25°C) Symbol Test Condition ⎯ I DRP = DSF TPC8403 Min Typ. Max Unit ⎯ ⎯ ±10 µA ⎯ ⎯ µA 10 ⎯ ⎯ ⎯ ⎯ 15 ⎯ 1.3 2.5 V ⎯ mΩ ...

Page 5

... Gate-source voltage V 100 50 30 25° −30 −100 −0.1 −0.3 5 TPC8403 I – Common source −3.4 V −3 25°C −10 V Pulse test −8 V −3.2 V −6 V −3 V −2.8 V −2.6 V −2 −2.2 V −2 −3 −4 −5 ...

Page 6

... Ambient temperature Ta (°C) (V) Dynamic input/output characteristics −40 a) Common source −4 25°C Pulse test − −24 V −20 −10 0 160 200 0 Total gate charge Q 6 TPC8403 I – −10 −3 −5 − Common source Ta = 25°C Pulse test 0.4 0.6 0.8 1.0 1.2 (V) ...

Page 7

... I D max (pulse 0.1 * Single pulse Ta = 25°C Curves must be derated linearly with increase in temperature. V DSS max 0.01 0.01 0 Drain-source voltage V DS − 0 Pulse width t (S) w (Note 3b 100 (V) 7 TPC8403 (4) (3) (2) (1) Single pulse 100 1000 2004-07-06 ...

Page 8

... Drain-source voltage V 0.6 0.5 0.4 0.3 0.2 0 (V) Gate-source voltage V 100 25° 100 0.1 0.3 8 TPC8403 I – Common source 3 25°C Pulse test 3.6 V 3 – Common source Ta = 25°C Pulse test ...

Page 9

... Dynamic input/output characteristics 40 a) Common source 25°C Pulse test 160 200 0 8 Total gate charge Q 9 TPC8403 I – Common source Ta = 25°C Pulse test −0.4 −0.6 −0.8 −1.0 −1.2 ...

Page 10

... I D max (pulse 0.1 * Single pulse Ta = 25°C Curves must be derated linearly with increase in temperature. V DSS max 0.01 0.01 0 Drain-source voltage V DS − 0 Pulse width t (S) w (Note 3b 100 (V) 10 TPC8403 (4) (3) (2) (1) Single pulse 100 1000 2004-07-06 ...

Page 11

... Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 11 TPC8403 030619EAA 2004-07-06 ...

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