BLF7G24L-160P NXP Semiconductors, BLF7G24L-160P Datasheet - Page 8

160 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz

BLF7G24L-160P

Manufacturer Part Number
BLF7G24L-160P
Description
160 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz
Manufacturer
NXP Semiconductors
Datasheet
NXP Semiconductors
BLF7G24L-160P_7G24LS-160P
Objective data sheet
7.4 Test circuit
Table 9.
For test circuit, see
[1]
[2]
[3]
Component
C1, C6
C2, C3, C7, C8
C4, C5, C9, C10
C11, C12
C13
R1, R2
Fig 12. Component layout for test circuit
American technical ceramics type 100B or capacitor of same quality.
American technical ceramics type 100A or capacitor of same quality.
TDK or capacitor of same quality.
C1
See
List of components
C4
C5
INPUT
REV01
Table 9
BLF7G24L-160P; BLF7G24LS-160P
All information provided in this document is subject to legal disclaimers.
Figure
for a list of components.
Description
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
electrolytic capacitor
chip resistor
R1
R2
Rev. 2 — 1 March 2012
12.
C2
C3
BLF7G24LS-160P
Value
7.5 pF
16 pF
10 F
220 F, 63 V
2 ; SMD 805
20 nF
C8
C7
Power LDMOS transistor
C10
C9
OUTPUT
BLF7G24LS-160P
C11
C12
© NXP B.V. 2012. All rights reserved.
[1]
[2]
[1]
[3]
C13
aaa-002646
Remarks
C6
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