BLF7G24L-160P NXP Semiconductors, BLF7G24L-160P Datasheet - Page 7

• Manufacturer Part Number: BLF7G24L-160P
• Description: 160 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BLF7G24L-160P_7G24LS-160P
Objective data sheet
Fig 9.
G%
*
S
S S
(1) G
(2) G
(3) G
(4) 
(5) 
(6) 







V
Power gain and drain efficiency as function of
output power; typical values
DS
D
D
D
p
p
p
at f = 2300 MHz
at f = 2350 MHz
at f = 2400 MHz
at f = 2300 MHz
at f = 2350 MHz
at f = 2400 MHz
= 28 V; V

7.3.3 CW




GS1




= 24 V; I
Fig 11. Input return loss as a function of output power; typical values

(1) f = 2300 MHz
(2) f = 2350 MHz
(3) f = 2400 MHz
Dq1

V
DS
= 1200 mA.
3
= 28 V; V

/
BLF7G24L-160P; BLF7G24LS-160P
G%P
All information provided in this document is subject to legal disclaimers.
DDD

5/
G%
GS1

LQ




= 24 V; I
Rev. 2 — 1 March 2012








'

Dq1
= 1200 mA.
Fig 10. Power gain and drain efficiency as function of

G%



*
S
S S
(1) G
(2) G
(3) G
(4) 
(5) 
(6) 








V
output power; typical values

D
D
D
DS
p
p
p
at f = 2300 MHz
at f = 2350 MHz
at f = 2400 MHz
at f = 2300 MHz
at f = 2350 MHz
at f = 2400 MHz
= 28 V; V


3






/

GS1
G%P
DDD

= 24 V; I


Power LDMOS transistor

Dq1
= 1200 mA.
3
© NXP B.V. 2012. All rights reserved.

/
DDD
:







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