BLF7G24L-160P NXP Semiconductors, BLF7G24L-160P Datasheet - Page 3

• Manufacturer Part Number: BLF7G24L-160P
• Description: 160 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz
• Manufacturer: NXP Semiconductors

NXP Semiconductors
5. Thermal characteristics
6. Characteristics
7. Test information
BLF7G24L-160P_7G24LS-160P
Objective data sheet
7.1 Ruggedness in class-AB operation
Table 5.
Table 6.
T
Remark: All testing performed in a class-AB production test circuit.
Table 7.
Test signal: single carrier IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13).
PAR = 9.7 dB at 0.01 % probability on the CCDF, channel bandwidth is 1.2288 MHz; f
f
specified.
The BLF7G24L-160P and BLF7G24LS-160P are capable of withstanding a load
mismatch corresponding to VSWR = 10 : 1 through all phases under the following
conditions: V
Symbol Parameter
R
Symbol Parameter
V
V
I
I
I
g
R
Symbol
P
G
RL

ACPR
2
DSS
DSX
GSS
j
fs
D
(BR)DSS
GS(th)
L(AV)
th(j-c)
DS(on)
= 2400 MHz; RF performance at V
p
= 25
in
885k

C per section, unless otherwise specified.
drain-source breakdown voltage V
gate-source threshold voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state resistance V
thermal resistance from junction to case
Thermal characteristics
Characteristics
Functional test information
Parameter
average output power
power gain
input return loss
drain efficiency
adjacent channel power ratio (885 kHz)
DS
BLF7G24L-160P; BLF7G24LS-160P
All information provided in this document is subject to legal disclaimers.
= 28 V; I
Rev. 2 — 1 March 2012
Dq
= 1200 mA; P
DS
= 28 V; I
Conditions
V
V
V
V
V
V
I
L
D
GS
DS
GS
GS
DS
GS
DS
GS
= 160 W; f = 2300 MHz.
= 3.57 A
Dq
= 0 V; I
= 10 V; I
= 0 V; V
= V
= 10 V
= 11 V; V
= 10 V; I
= V
= 1200 mA; T
GS(th)
GS(th)
Conditions
T
Conditions
P
P
P
P
P
D
case
DS
L
L
L
L
L
D
D
= 1 mA
+ 3.75 V;
DS
+ 3.75 V;
= 30 W
= 30 W
= 30 W
= 30 W
= 30 W
= 102 mA
= 3.57 A
= 28 V
= 80 C; P
= 0 V
case
= 25
Power LDMOS transistor
L
Min
66
1.5
-
-
-
-
-
= 30 W
Min Typ
-
-
-
-
-

C; unless otherwise
© NXP B.V. 2012. All rights reserved.
30
18.5
13.5 -
27.5
43.5 -
Typ
-
1.9
-
19
-
7.1
0.14
1
Typ
0.2
= 2300 MHz;
Max Unit
-
-
-
Max Unit
-
2.3
5
-
500
-
-
3 of 14
Unit
K/W
W
dB
dB
%
dBc
V
V
A
A
nA
S
