BLF7G24L-160P NXP Semiconductors, BLF7G24L-160P Datasheet - Page 6

160 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz

BLF7G24L-160P

Manufacturer Part Number
BLF7G24L-160P
Description
160 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz
Manufacturer
NXP Semiconductors
Datasheet
NXP Semiconductors
BLF7G24L-160P_7G24LS-160P
Objective data sheet
Fig 7.
5/
G%
(1) f = 2300 MHz
(2) f = 2350 MHz
(3) f = 2400 MHz
LQ







V
Input return loss as a function of output
power; typical values
DS
= 28 V; V

GS1

= 24 V; I



Dq1

= 1200 mA.
3
/
BLF7G24L-160P; BLF7G24LS-160P
G%P

All information provided in this document is subject to legal disclaimers.
DDD

Rev. 2 — 1 March 2012
$&35
Fig 8.
G%F
N
(1) f = 2300 MHz
(2) f = 2350 MHz
(3) f = 2400 MHz







V
Adjacent channel power ratio (1980 kHz) as a
function of output power; typical values
DS
= 28 V; V

GS1

= 24 V; I



Power LDMOS transistor
Dq1

= 1200 mA.
3
/
G%P
© NXP B.V. 2012. All rights reserved.

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