BLF7G24L-160P NXP Semiconductors, BLF7G24L-160P Datasheet - Page 11

• Manufacturer Part Number: BLF7G24L-160P
• Description: 160 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz
• Manufacturer: NXP Semiconductors

NXP Semiconductors
9. Abbreviations
10. Revision history
Table 11.
BLF7G24L-160P_7G24LS-160P
Objective data sheet
Document ID
BLF7G24L-160P_7G24LS-160P v.2
Modifications:
BLF7G24L-160P_7G24LS-160P v.1
Revision history
Table 10.
Acronym
CCDF
IS-95
ESD
LDMOS
LDMOST
PAR
RF
VSWR
Abbreviations
BLF7G24L-160P; BLF7G24LS-160P
Release date
20120301
20120210
All information provided in this document is subject to legal disclaimers.
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Description
Complementary Cumulative Distribution Function
Interim Standard 95
ElectroStatic Discharge
Laterally Diffused Metal Oxide Semiconductor
Laterally Diffused Metal Oxide Semiconductor Transistor
Peak-to-Average power Ratio
Radio Frequency
Voltage Standing Wave Ratio
Table 5 on page
Table 6 on page
Section 7.2 on page
Section 7.3 on page
Section 7.4 on page
Rev. 2 — 1 March 2012
Data sheet status
Objective data sheet
Objective data sheet
3: value has been entered
3: some values have been changed
4: section has been added
4: section has been added
8: section has been added
Change notice
-
-
Power LDMOS transistor
Supersedes
BLF7G24L-160P_
7G24LS-160P v.1
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© NXP B.V. 2012. All rights reserved.
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