BLF7G24L-160P NXP Semiconductors, BLF7G24L-160P Datasheet - Page 2

160 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz

BLF7G24L-160P

Manufacturer Part Number
BLF7G24L-160P
Description
160 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz
Manufacturer
NXP Semiconductors
Datasheet
NXP Semiconductors
2. Pinning information
3. Ordering information
4. Limiting values
BLF7G24L-160P_7G24LS-160P
Objective data sheet
Table 2.
[1]
Table 3.
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Pin
BLF7G24L-160P (SOT539A)
1
2
3
4
5
BLF7G24LS-160P (SOT539B)
1
2
3
4
5
Type number
BLF7G24L-160P
BLF7G24LS-160P
Symbol
V
V
T
T
stg
j
DS
GS
Connected to flange.
Pinning
Ordering information
Limiting values
Parameter
drain-source voltage
gate-source voltage
storage temperature
junction temperature
Description
drain1
drain2
gate1
gate2
source
drain1
drain2
gate1
gate2
source
BLF7G24L-160P; BLF7G24LS-160P
All information provided in this document is subject to legal disclaimers.
Package
Name Description
-
-
Rev. 2 — 1 March 2012
flanged balanced LDMOST ceramic package;
2 mounting holes; 4 leads
earless flanged balanced LDMOST ceramic package;
4 leads
Conditions
[1]
[1]
Simplified outline
1
3
1
3
2
4
2
4
Power LDMOS transistor
5
5
Graphic symbol
Min
-
0.5
65
-
© NXP B.V. 2012. All rights reserved.
3
4
3
4
Max
65
+13
+150
225
Version
SOT539A
SOT539B
1
2
1
2
sym117
sym117
2 of 14
5
5
Unit
V
V
C
C

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