BUK763R6-40C NXP Semiconductors, BUK763R6-40C Datasheet - Page 9

• Manufacturer Part Number: BUK763R6-40C
• Description: Standard level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BUK763R6-40C
Product data sheet
Fig 13. Gate charge waveform definitions
Fig 15. Input, output and reverse transfer capacitances
(pF)
10
10
10
C
4
3
2
10
as a function of drain-source voltage; typical
values
V
-1
V
V
V
GS(pl)
DS
GS(th)
GS
Q
GS1
1
I
Q
D
GS
Q
GS2
Q
G(tot)
Q
GD
10
V
All information provided in this document is subject to legal disclaimers.
DS
003aaa508
003aac585
(V)
C
C
C
iss
oss
rss
10
Rev. 04 — 16 June 2010
2
Fig 14. Gate-source voltage as a function of gate
Fig 16. Source (diode forward) current as a function of
V
(A)
(V)
I
120
S
GS
10
90
60
30
8
6
4
2
0
0
charge; typical values
source-drain (diode forward) voltage; typical
values
0
0
I
T
D
N-channel TrenchMOS standard level FET
j
= 25 A
= 25 °C
25
175 ° C
V
0.5
DS
BUK763R6-40C
= 14V
50
1
T
j
= 25 ° C
75
© NXP B.V. 2010. All rights reserved.
V
32V
Q
SD
003aac586
003aac587
G
(V)
(nC)
100
1.5
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