BUK763R6-40C NXP Semiconductors, BUK763R6-40C Datasheet - Page 7

• Manufacturer Part Number: BUK763R6-40C
• Description: Standard level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BUK763R6-40C
Product data sheet
Fig 5.
Fig 7.
(A)
I
10
10
10
10
10
10
D
120
(S)
g
90
60
30
fs
−1
−2
−3
−4
−5
−6
0
drain current; typical values
gate-source voltage
Forward transconductance as a function of
Sub-threshold drain current as a function of
0
0
15
2
min
30
typ
4
45
max
V
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GS
003aac583
I
D
(V)
(A)
03aa35
60
6
Rev. 04 — 16 June 2010
Fig 6.
Fig 8.
(A)
(A)
I
I
180
150
120
D
150
D
120
90
60
30
90
60
30
0
0
function of gate-source voltage; typical values
function of drain-source voltage; typical values
Transfer characteristics: drain current as a
Output characteristics: drain current as a
0
0
20 10
N-channel TrenchMOS standard level FET
5.8
1.5
2
T
j
= 175 ° C
BUK763R6-40C
4
3
25 ° C
V
GS
4.5
6
© NXP B.V. 2010. All rights reserved.
(V) =
V
V
003aac584
GS
003aac818
DS
(V)
5.5
5.2
4.8
4.5
(V)
5
8
6
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