BUK763R6-40C NXP Semiconductors, BUK763R6-40C Datasheet - Page 8

• Manufacturer Part Number: BUK763R6-40C
• Description: Standard level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BUK763R6-40C
Product data sheet
Fig 9.
Fig 11. Normalized drain-source on-state resistance
RDSon
(m Ω )
1.5
0.5
a
6.5
3.5
2
1
0
of gate voltage; typical values
-60
factor as a function of junction temperature
Drain-source on-state resistance as a function
8
5
2
4
0
8
60
12
120
16
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V
T
003aac862
GS
j
03ne89
( ° C)
(V)
180
20
Rev. 04 — 16 June 2010
Fig 10. Gate-source threshold voltage as a function of
Fig 12. Drain-source on-state resistance as a function
V
GS(th)
R
(mΩ)
(V)
DSon
20
15
10
5
0
5
4
3
2
1
0
−60
junction temperature
of drain current; typical values
0
V
N-channel TrenchMOS standard level FET
GS
(V) = 4.5
0
4.8
60
BUK763R6-40C
5
60
max
min
typ
5.2
120
120
© NXP B.V. 2010. All rights reserved.
T
5.5
003aac820
j
5.8
I
(°C)
D
03aa32
10
(A)
20
180
180
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