BUK763R6-40C NXP Semiconductors, BUK763R6-40C Datasheet - Page 6

• Manufacturer Part Number: BUK763R6-40C
• Description: Standard level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
6. Characteristics
Table 6.
BUK763R6-40C
Product data sheet
Symbol
Static characteristics
V
V
I
I
R
Dynamic characteristics
Q
Q
Q
C
C
C
t
t
t
t
L
L
Source-drain diode
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
rr
D
S
(BR)DSS
GS(th)
SD
DSon
iss
oss
rss
G(tot)
GS
GD
r
Characteristics
Parameter
drain-source
breakdown voltage
gate-source threshold
voltage
drain leakage current
gate leakage current
drain-source on-state
resistance
total gate charge
gate-source charge
gate-drain charge
input capacitance
output capacitance
reverse transfer
capacitance
turn-on delay time
rise time
turn-off delay time
fall time
internal drain
inductance
internal source
inductance
source-drain voltage
reverse recovery time
recovered charge
Conditions
I
I
I
see
I
see
I
see
V
V
V
V
V
see
V
see
I
T
I
T
V
T
V
R
from drain lead 6 mm from package to
centre of die ; T
from contact screw on mounting base to
centre of die ; T
from source lead to source bond pad ;
T
I
see
I
V
All information provided in this document is subject to legal disclaimers.
D
D
D
D
D
D
D
S
S
j
j
j
j
DS
DS
DS
DS
GS
GS
GS
DS
GS
G(ext)
= 25 °C; see
= 25 °C; see
= 25 °C; see
= 25 °C
= 25 A; V
= 20 A; dI
= 0.25 mA; V
= 0.25 mA; V
= 1 mA; V
= 1 mA; V
= 1 mA; V
= 25 A; V
= 25 A; V
Figure 10
Figure 10
Figure 10
Figure 11
Figure
Figure 16
= 40 V; V
= 40 V; V
= 0 V; V
= 0 V; V
= 30 V; R
= 10 V; I
= 10 V; I
= 0 V; V
= -10 V; V
= 10 Ω; T
Rev. 04 — 16 June 2010
11; see
DS
DS
GS
S
DS
DS
DS
GS
GS
DS
D
D
/dt = -100 A/µs;
GS
GS
L
DS
= 25 A; T
= 25 A; T
= 32 V; V
= 32 V; V
= 0 V; T
= V
= V
= V
Figure
Figure
Figure 15
= 1.2 Ω; V
GS
GS
= 20 V; T
= -20 V; T
= 25 V; f = 1 MHz;
j
j
j
= 25 °C
= 25 °C
= 0 V; T
= 0 V; T
= 25 °C
= 30 V; T
= 0 V; T
= 0 V; T
GS
GS
GS
Figure 12
; T
; T
; T
13; see
14; see
j
= 25 °C;
j
j
j
j
j
GS
GS
j
j
j
= 25 °C;
= 175 °C;
= -55 °C;
= 175 °C;
= 25 °C;
j
GS
= 175 °C
= 25 °C
= 25 °C
= 25 °C
j
j
j
= 10 V;
= 10 V;
= 25 °C
= -55 °C
= 25 °C
= 10 V;
Figure 14
Figure 13
N-channel TrenchMOS standard level FET
BUK763R6-40C
Min
40
36
2
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
3
-
-
-
0.02
2
2
-
3
97
21
35
4391
800
535
40
95
129
92
4.5
3.5
7.5
0.83
44
57
© NXP B.V. 2010. All rights reserved.
1040
-
Max
-
-
4
-
4.4
500
1
100
100
7.2
3.6
-
-
-
5708
696
-
-
-
-
-
-
1.2
-
-
Unit
V
V
V
V
V
µA
µA
nA
nA
mΩ
mΩ
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
nH
nH
nH
V
ns
nC
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