BUK763R6-40C NXP Semiconductors, BUK763R6-40C Datasheet - Page 3

• Manufacturer Part Number: BUK763R6-40C
• Description: Standard level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
4. Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
[2]
[3]
BUK763R6-40C
Product data sheet
Symbol
V
V
V
I
I
P
T
T
Source-drain diode
I
I
Avalanche ruggedness
E
D
DM
S
SM
stg
j
DS
DGR
GS
tot
DS(AL)S
-20V accumulated duration not to exceed 168 hrs.
Current is limited by power dissipation chip rating.
Continuous current is limited by package.
Limiting values
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
source current
peak source current
non-repetitive
drain-source
avalanche energy
Conditions
T
R
T
see
T
T
see
T
see
T
T
t
I
V
All information provided in this document is subject to legal disclaimers.
p
D
j
mb
mb
mb
mb
mb
mb
GS
GS
≤ 10 µs; pulsed; T
≥ 25 °C; T
= 100 A; V
Figure 3
Figure 3
Figure 3
= 25 °C; V
= 100 °C; V
= 25 °C; V
= 25 °C; t
= 25 °C; see
= 25 °C
= 10 V; T
= 20 kΩ
Rev. 04 — 16 June 2010
j
sup
≤ 175 °C
j(init)
p
GS
GS
≤ 10 µs; pulsed;
GS
≤ 40 V; R
Figure 2
= 10 V; see
= 10 V; see
= 25 °C; unclamped
= 10 V; see
mb
= 25 °C
GS
= 50 Ω;
Figure
Figure
Figure 1
N-channel TrenchMOS standard level FET
1;
1;
[1]
[2]
[3]
[3]
[3]
[2]
BUK763R6-40C
Min
-
-
-20
-
-
-
-
-
-55
-55
-
-
-
-
Typ
-
-
-
-
-
-
-
-
-
-
-
-
-
-
© NXP B.V. 2010. All rights reserved.
175
Max
40
40
20
167
100
100
668
203
175
100
167
668
292
Unit
V
V
V
A
A
A
A
W
°C
°C
A
A
A
mJ
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