BUK763R6-40C NXP Semiconductors, BUK763R6-40C Datasheet - Page 2

• Manufacturer Part Number: BUK763R6-40C
• Description: Standard level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
2. Pinning information
Table 2.
3. Ordering information
Table 3.
BUK763R6-40C
Product data sheet
Pin
1
2
3
mb
Type number
BUK763R6-40C
Symbol Description
G
D
S
D
Pinning information
Ordering information
1.4 Quick reference data
gate
drain
source
mounting base; connected to
drain
Table 1.
[1]
Package
Name
D2PAK
Symbol
V
I
P
Static characteristics
R
Avalanche ruggedness
E
Dynamic characteristics
Q
D
DS
tot
DS(AL)S
DSon
GD
Continuous current is limited by package.
Quick reference data
Parameter
drain-source
voltage
drain current
total power
dissipation
drain-source
on-state
resistance
non-repetitive
drain-source
avalanche energy
gate-drain charge V
Description
plastic single-ended surface-mounted package (D2PAK); 3 leads
(one lead cropped)
All information provided in this document is subject to legal disclaimers.
Rev. 04 — 16 June 2010
Simplified outline
SOT404 (D2PAK)
Conditions
T
V
see
T
V
T
see
I
R
T
V
see
D
j
mb
j
j(init)
GS
GS
GS
DS
GS
≥ 25 °C; T
= 25 °C;
= 100 A; V
Figure
Figure
Figure
= 25 °C; see
= 10 V; T
= 10 V; I
= 10 V; I
= 32 V; T
= 50 Ω; V
= 25 °C; unclamped
1
mb
2
3
1; see
11; see
14; see
j
D
D
sup
≤ 175 °C
mb
j
GS
= 25 °C;
= 25 A;
= 25 A;
N-channel TrenchMOS standard level FET
≤ 40 V;
= 25 °C;
= 10 V;
Figure 2
Figure 3
Figure 12
Figure 13
Graphic symbol
BUK763R6-40C
[1]
mbb076
G
Min
-
-
-
-
-
-
© NXP B.V. 2010. All rights reserved.
D
S
Typ
-
-
-
3
-
35
Version
SOT404
Max Unit
40
100
203
3.6
292
-
2 of 14
V
A
W
mΩ
mJ
nC