MT16HTF25664HZ-667H1 Micron Technology Inc, MT16HTF25664HZ-667H1 Datasheet - Page 9

• Manufacturer Part Number: MT16HTF25664HZ-667H1
• Description: MODULE DDR2 SDRAM 2GB 200SODIMM
• Manufacturer: Micron Technology Inc
• Series: -r

Specifications of MT16HTF25664HZ-667H1

• Memory Type: DDR2 SDRAM
• Memory Size: 2GB
• Speed: 667MT/s
• Features: -
• Package / Case: 200-SODIMM
• Main Category: DRAM Module
• Sub-category: DDR2 SDRAM
• Module Type: 200SODIMM
• Device Core Size: 64b
• Organization: 256Mx64
• Total Density: 2GByte
• Chip Density: 128Mb
• Access Time (max): 900ns
• Package Type: SODIMM
• Maximum Clock Rate: 667MHz
• Operating Supply Voltage (typ): 1.8V
• Operating Current: 1.136A
• Number Of Elements: 16
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Operating Temp Range: 0C to 70C
• Operating Temperature Classification: Commercial
• Pin Count: 200
• Mounting: Socket
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Electrical Specifications
Table 8: Absolute Maximum Ratings
PDF: 09005aef8339ef97
htf16c128_256_512x64hz.pdf - Rev. C 9/10 EN
V
Symbol
IN
I
V
VREF
T
, V
I
T
OZ
I
DD
C
A
I
1
OUT
Parameter
V
Voltage on any pin relative to V
Input leakage current; Any input 0V ≤ V
V
pins not under test = 0V)
Output leakage current; 0V ≤ V
ODT are disabled
V
Module ambient operating temperature
DDR2 SDRAM component operating tem-
perature
DD
DD
REF
; V
supply voltage relative to V
leakage current; V
REF
Notes:
2
input 0V ≤ V
Stresses greater than those listed may cause permanent damage to the module. This is a
stress rating only, and functional operation of the module at these or any other condi-
tions outside those indicated in the device data sheet are not implied. Exposure to
absolute maximum rating conditions for extended periods may adversely affect reliability.
1. The refresh rate is required to double when T
2. For further information, refer to technical note TN-00-08: "Thermal Applications," avail-
able on Micron’s Web site.
IN
REF
≤ 0.95V; (All other
1GB, 2GB, 4GB (x64, DR) 200-Pin DDR2 SDRAM SODIMM
= valid V
OUT
SS
SS
; DQ and
REF
level
IN
≤
Address inputs, RAS#, CAS#,
WE#, BA
S#, CKE, ODT, CK, CK#
DM
DQ, DQS, DQS#
Commercial
Industrial
Commercial
Industrial
9
Micron Technology, Inc. reserves the right to change products or specifications without notice.
C
exceeds 85°C.
Electrical Specifications
Min
–1.0
–0.5
–80
–40
–10
–10
–32
–40
–40
0
0
© 2008 Micron Technology, Inc. All rights reserved.
Max
2.3
2.3
80
40
10
10
32
70
85
85
95
Units
µA
µA
µA
°C
°C
°C
°C
V
V