MT16HTF25664HZ-667H1 Micron Technology Inc, MT16HTF25664HZ-667H1 Datasheet - Page 9

• Manufacturer Part Number: MT16HTF25664HZ-667H1
• Description: MODULE DDR2 SDRAM 2GB 200SODIMM
• Manufacturer: Micron Technology Inc
• Series: -r

Specifications of MT16HTF25664HZ-667H1

• Memory Type: DDR2 SDRAM
• Memory Size: 2GB
• Speed: 667MT/s
• Features: -
• Package / Case: 200-SODIMM
• Main Category: DRAM Module
• Sub-category: DDR2 SDRAM
• Module Type: 200SODIMM
• Device Core Size: 64b
• Organization: 256Mx64
• Total Density: 2GByte
• Chip Density: 128Mb
• Access Time (max): 900ns
• Package Type: SODIMM
• Maximum Clock Rate: 667MHz
• Operating Supply Voltage (typ): 1.8V
• Operating Current: 1.136A
• Number Of Elements: 16
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Operating Temp Range: 0C to 70C
• Operating Temperature Classification: Commercial
• Pin Count: 200
• Mounting: Socket
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Table 10:
PDF: 09005aef8339ef97/Source: 09005aef8339eff3
HTF16C128_256x64HZ.fm - Rev. A 5/08 EN
Parameter/Condition
Operating one bank active-precharge current:
t
commands; Address bus inputs are switching; Data bus inputs are switching
Operating one bank active-read-precharge current: I
CL = CL (I
t
bus inputs are switching; Data pattern is same as I
Precharge power-down current: All device banks idle;
is LOW; Other control and address bus inputs are stable; Data bus inputs are
floating
Precharge quiet standby current: All device banks idle;
CKE is HIGH, S# is HIGH; Other control and address bus inputs are stable; Data
bus inputs are floating
Precharge standby current: All device banks idle;
HIGH, S# is HIGH; Other control and address bus inputs are switching; Data
bus inputs are switching
Active power-down current: All device banks open;
t
inputs are stable; Data bus inputs are floating
Active standby current: All device banks open;
t
commands; Other control and address bus inputs are switching; Data bus
inputs are switching
Operating burst write current: All device banks open; Continuous burst
writes; BL = 4, CL = CL (I
t
inputs are switching; Data bus inputs are switching
Operating burst read current: All device banks open; Continuous burst
reads; I
t
commands; Address bus inputs are switching; Data bus inputs are switching
Burst refresh current:
t
control and address bus inputs are switching; Data bus inputs are switching
Self refresh current: CK and CK# at 0V; CKE ≤ 0.2V; Other control and
address bus inputs are floating; Data bus inputs are floating
Operating bank interleave read current: All device banks interleaving
reads; I
t
HIGH, S# is HIGH between valid commands; Address bus inputs are stable
during deselects; Data bus inputs are switching
RC =
RCD =
CK =
RAS =
RP =
RAS =
RFC (I
CK =
t
t
t
t
RP (I
DD
RC (I
CK (I
CK (I
t
t
t
OUT
OUT
RAS MAX (I
RAS MAX (I
RCD (I
) interval; CKE is HIGH, S# is HIGH between valid commands; Other
DD
DD
DD
DD
= 0mA; BL = 4, CL = CL (I
= 0mA; BL = 4, CL = CL (I
DD
), AL = 0;
); CKE is HIGH, S# is HIGH between valid commands; Address bus
),
DDR2 I
Values are for the MT47H128M8 DDR2 SDRAM only and are computed from values specified in the
1Gb (128 Meg x 8) component data sheet
); CKE is LOW; Other control and address bus
),
DD
t
t
RAS =
RC =
); CKE is HIGH, S# is HIGH between valid commands; Address
Notes:
DD
DD
t
t
),
),
CK =
DD
RC (I
t
RAS MIN (I
t
t
DD
RP =
RP =
t
CK =
Specifications and Conditions – 2GB
), AL = 0;
DD
t
CK (I
1. Value calculated as one module rank in this operating condition; all other module ranks in
2. Value calculated reflects all module ranks in this operating condition.
t
t
),
RP (I
RP (I
t
CK (I
t
I
RRD =
DD
DD
1GB, 2GB (x64, DR) 200-Pin Halogen-Free DDR2 SDRAM SODIMM
DD
2
DD
DD
),
P (CKE LOW) mode.
DD
DD
t
DD
); CKE is HIGH, S# is HIGH between valid
CK =
t
); CKE is HIGH, S# is HIGH between valid
); CKE is HIGH, S# is HIGH between valid
RC =
), AL = 0;
), AL =
); REFRESH command at every
t
RRD (I
t
CK (I
t
RC (I
t
DD
RCD (I
DD
t
),
DD
CK =
),
t
t
DD
RCD =
),
CK =
t
t
DD
RAS =
t
CK =
t
4W
RAS =
CK =
t
CK (I
) - 1 ×
t
CK (I
t
t
t
RCD (I
OUT
CK =
CK (I
t
t
DD
t
CK (I
RAS MAX (I
t
CK =
RAS MIN (I
9
t
DD
),
CK (I
= 0mA; BL = 4,
DD
t
Fast PDN exit
MR[12] = 0
Slow PDN exit
MR[12] = 1
),
CK (I
DD
DD
t
),
CK (I
DD
); CKE is
); CKE is
DD
);
Micron Technology, Inc., reserves the right to change products or specifications without notice.
DD
DD
DD
); CKE
);
),
),
Symbol
I
I
I
I
I
I
I
DD
DD
DD
DD
DD
I
I
DD
DD
I
I
I
DD
DD
DD
DD
DD
4W
2Q
2N
3N
4R
2P
3P
0
1
5
6
7
1
1
2
2
1
2
2
1
2
2
2
1
1,336 1,136 1,056
1,336 1,136 1,056
3,760 3,440 3,360 3,280
2,736 2,296 2,216 2,136
-80E/
-800 -667 -53E -40E Units
Electrical Specifications
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936
112
800
800
640
160
960
112
©2008 Micron Technology, Inc. All rights reserved
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856
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880
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616
816
112
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720
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896
896
616
776
112
560
560
480
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mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA