MT16HTF25664HZ-667H1 Micron Technology Inc, MT16HTF25664HZ-667H1 Datasheet - Page 4

• Manufacturer Part Number: MT16HTF25664HZ-667H1
• Description: MODULE DDR2 SDRAM 2GB 200SODIMM
• Manufacturer: Micron Technology Inc
• Series: -r

Specifications of MT16HTF25664HZ-667H1

• Memory Type: DDR2 SDRAM
• Memory Size: 2GB
• Speed: 667MT/s
• Features: -
• Package / Case: 200-SODIMM
• Main Category: DRAM Module
• Sub-category: DDR2 SDRAM
• Module Type: 200SODIMM
• Device Core Size: 64b
• Organization: 256Mx64
• Total Density: 2GByte
• Chip Density: 128Mb
• Access Time (max): 900ns
• Package Type: SODIMM
• Maximum Clock Rate: 667MHz
• Operating Supply Voltage (typ): 1.8V
• Operating Current: 1.136A
• Number Of Elements: 16
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Operating Temp Range: 0C to 70C
• Operating Temperature Classification: Commercial
• Pin Count: 200
• Mounting: Socket
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Table 6:
PDF: 09005aef8339ef97/Source: 09005aef8339eff3
HTF16C128_256x64HZ.fm - Rev. A 5/08 EN
RAS#, CAS#,
CK0, CK0#,
CK1, CK1#
DQS#[7:0]
DQS[7:0],
ODT[1:0]
DQ[63:0]
Symbol
CKE[1:0]
DM[7:0]
A[13:0]
BA[2:0]
SA[1:0]
V
S#[1:0]
WE#
SDA
DDSPD
V
V
SCL
V
NC
REF
DD
SS
Pin Descriptions
(SSTL_18)
(SSTL_18)
(SSTL_18)
(SSTL_18)
(SSTL_18)
(SSTL_18)
(SSTL_18)
(SSTL_18)
(SSTL_18)
(SSTL_18)
(SSTL_18)
(SSTL_18)
(SSTL_18)
Supply
Supply
Supply
Supply
Input
Input
Input
Input
Input
Input
Input
Input
Input
Input
Type
I/O
I/O
I/O
–
Description
Address inputs: Provide the row address for ACTIVE commands, and the column address and
auto precharge bit (A10) for READ/WRITE commands, to select one location out of the memory
array in the respective bank. A10 sampled during a PRECHARGE command determines whether
the PRECHARGE applies to one device bank (A10 LOW, device bank selected by BA[2/1:0]) or all
device banks (A10 HIGH). The address inputs also provide the op-code during a LOAD MODE
command.
Bank address inputs: BA[2/1:0] define to which device bank an ACTIVE, READ, WRITE, or
PRECHARGE command is being applied. BA[2/1:0] define which mode register, including MR,
EMR, EMR(2), and EMR(3), is loaded during the LOAD MODE command. BA[1:0] (1GB), BA[2:0]
(2GB).
Clock: CK and CK# are differential clock inputs. All address and control input signals are
sampled on the crossing of the positive edge of CK and the negative edge of CK#.
Clock enable: CKE (registered HIGH) activates and CKE (registered LOW) deactivates clocking
circuitry on the DDR2 SDRAM.
Input data mask: DM is an input mask signal for write data. Input data is masked when DM is
sampled HIGH along with that input data during a WRITE access. DM is sampled on both edges
of DQS. Although DM pins are input-only, the DM loading is designed to match that of DQ and
DQS pins.
On-die termination: ODT (registered HIGH) enables termination resistance internal to the
DDR2 SDRAM. When enabled, ODT is only applied to each of the following pins: DQ, DQS,
DQS#, and DM. The ODT input will be ignored if disabled via the LOAD MODE command.
Command inputs: RAS#, CAS#, and WE# (along with S#) define the command being entered.
Chip select: S# enables (registered LOW) and disables (registered HIGH) the command
decoder. All commands are masked when S# is registered HIGH. S# provides for external rank
selection on systems with multiple ranks. S# is considered part of the command code.
Presence-detect address inputs: These pins are used to configure the presence-detect
device.
Serial clock for presence-detect: SCL is used to synchronize the presence-detect data
transfer to and from the module.
Data input/output: Bidirectional data bus.
Data strobe: Output with read data, input with write data for source-synchronous operation.
Edge-aligned with read data, center-aligned with write data. DQS# is only used when
differential data strobe mode is enabled via the LOAD MODE command.
Serial presence-detect data: SDA is a bidirectional pin used to transfer addresses and data
into and out of the presence-detect portion of the module.
Power supply: +1.8V ±0.1V.
Serial EEPROM positive power supply: +1.7V to +3.6V.
SSTL_18 reference voltage (V
Ground.
No connect: These pins should be left unconnected.
1GB, 2GB (x64, DR) 200-Pin Halogen-Free DDR2 SDRAM SODIMM
DD
/2).
4
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Pin Assignments and Descriptions
©2008 Micron Technology, Inc. All rights reserved