MT47H16M16BG-3 Micron Technology Inc, MT47H16M16BG-3 Datasheet - Page 61

• Manufacturer Part Number: MT47H16M16BG-3
• Manufacturer: Micron Technology Inc

Specifications of MT47H16M16BG-3

• Lead Free Status / Rohs Status: Compliant

Figure 28: Nominal Slew Rate for
Figure 29: Tangent Line for
PDF: 09005aef8117c187
256MbDDR2.pdf - Rev. M 7/09 EN
Note:
Note:
V
V
V
V
Hold slew rate
rising signal
IH(AC)min
IH(DC)min
IL(DC)max
IL(AC)max
V
V
V
V
V
DQS# 1
REF(DC)
1. DQS, DQS# signals must be monotonic between V
IH(AC)min
IH(DC)min
1. DQS, DQS# signals must be monotonic between V
IL(DC)max
IL(AC)max
DQS 1
V
V
DQS# 1
DDQ
REF(DC)
DQS 1
V
V
SS
Hold slew rate
rising signal
t
DDQ
V
DH
SS
DC to V
=
region
DC to V
Tangent line (V
region
t
DH
REF
=
REF
V
REF(DC)
Nominal
slew rate
t IS
REF[DC]
Tangent
ΔTR
t IS
- V
line
ΔTR
IL(DC)max
- V
IL[DC]max
t IH
t IH
)
61
ΔTR
ΔTR
Hold slew rate
falling signal
Hold slew rate
falling signal
Nominal
line
Micron Technology, Inc. reserves the right to change products or specifications without notice.
Nominal
slew rate
t IS
DC to V
=
=
region
Tangent line (V
t IS
Tangent
V
DC to V
256Mb: x4, x8, x16 DDR2 SDRAM
line
IH(DC)min
region
REF
t IH
t IH
REF
ΔTF
- V
ΔTF
ΔTF
IH[DC]min
ΔTF
REF(DC)
Nominal
IL(DC)max
IL(DC)max
line
Input Slew Rate Derating
- V
REF[DC]
and V
and V
)
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IH(DC)min
IH(DC)min
.
.