MT9HVF6472PY-667F1 Micron Technology Inc, MT9HVF6472PY-667F1 Datasheet - Page 8

• Manufacturer Part Number: MT9HVF6472PY-667F1
• Manufacturer: Micron Technology Inc

Specifications of MT9HVF6472PY-667F1

• Main Category: DRAM Module
• Sub-category: DDR2 SDRAM
• Module Type: 240RDIMM
• Device Core Size: 72b
• Organization: 64Mx72
• Total Density: 512MByte
• Chip Density: 512Mb
• Access Time (max): 45ps
• Maximum Clock Rate: 667MHz
• Operating Supply Voltage (typ): 1.8V
• Operating Current: 1.62A
• Number Of Elements: 9
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Operating Temp Range: 0C to 90C
• Operating Temperature Classification: Commercial
• Pin Count: 240
• Mounting: Socket
• Lead Free Status / Rohs Status: Compliant

Electrical Specifications
Table 8:
Capacitance
AC Timing and Operating Conditions
Table 9:
PDF: 09005aef81de9391/Source: 09005aef81de9385
HVF9C32_64_128x72.fm - Rev. D 06/08 EN
Commercial
Commercial
T
V
Symbol
JUNCTION
IN
V
T
V
T
V
I
, V
CASE
DD
I
V
DD
STG
OZ
DD
I
REF
I
Q
OUT
L
Absolute Maximum Ratings
Module and Component Speed Grade Table
Parameter
V
V
V
Voltage on any pin relative to V
Input leakage current; Any input 0V ≤ V
V
under test = 0V
Output leakage current; 0V ≤ V
and ODT are disabled
V
Storage temperature
DDR2 SDRAM device operating temperature (die temperature)
DDR2 SDRAM device operating temperature (case temperature)
REF
REF
DD
DD
DD
Q supply voltage relative to V
L supply voltage relative to V
Notes:
supply voltage relative to V
input 0V ≤ V
leakage current; V
Stresses greater than those listed in Table 8 may cause permanent damage to the device.
This is a stress rating only, and functional operation of the device at these or any other
conditions above those indicated in the operational sections of this specification is not
implied. Exposure to absolute maximum rating conditions for extended periods may
affect reliability.
1. For further information refer to Micron Technical Note, TN-00-08 at
At DDR2 data rates, Micron encourages designers to simulate the performance of the
module to achieve optimum values. When inductance and delay parameters associated
with trace lengths are used in simulations, they are significantly more accurate and real-
istic than a gross estimation of module capacitance. Simulations can then render a
considerably more accurate result. JEDEC modules are now designed by using simula-
tions to close timing budgets.
Recommended AC operating conditions are given in the DDR2 component data sheets.
Component specifications are available on Micron’s Web site: www.micron.com. Module
speed grades correlate with the component speed grades shown in Table 9.
www.micron.com/support/designsupport/documents/technotes.
IN
256MB, 512MB, 1GB (x72, SR): 240-Pin DDR2 SDRAM VLP RDIMM
≤0.95V; All other pins not
REF
Module Speed Grade
= Valid V
OUT
SS
SS
SS
SS
-80E
-800
-667
-53E
-40E
≤ V
REF
DD
level
IN
Q; DQs
≤ V
DD
8
;
Command/Address,
RAS#, CAS#, WE# S#,
CKE, DM, ODT
CK, CK#
DQ, DQS, DQS#
Micron Technology, Inc., reserves the right to change products or specifications without notice.
1
1
Component Speed Grade
Electrical Specifications
Min
–1.0
–0.5
–0.5
–0.5
–10
–18
–55
–5
–5
0
0
©2006 Micron Technology, Inc. All rights reserved.
-25E
-37E
-25
-5E
-3
Max
100
2.3
2.3
2.3
2.3
10
18
90
85
5
5
Units
µA
µA
µA
°C
°C
°C
V
V
V
V