MT9HVF6472PY-667F1 Micron Technology Inc, MT9HVF6472PY-667F1 Datasheet - Page 12

• Manufacturer Part Number: MT9HVF6472PY-667F1
• Manufacturer: Micron Technology Inc

Specifications of MT9HVF6472PY-667F1

• Main Category: DRAM Module
• Sub-category: DDR2 SDRAM
• Module Type: 240RDIMM
• Device Core Size: 72b
• Organization: 64Mx72
• Total Density: 512MByte
• Chip Density: 512Mb
• Access Time (max): 45ps
• Maximum Clock Rate: 667MHz
• Operating Supply Voltage (typ): 1.8V
• Operating Current: 1.62A
• Number Of Elements: 9
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Operating Temp Range: 0C to 90C
• Operating Temperature Classification: Commercial
• Pin Count: 240
• Mounting: Socket
• Lead Free Status / Rohs Status: Compliant

Table 13:
PDF: 09005aef81de9391/Source: 09005aef81de9385
HVF9C32_64_128x72.fm - Rev. D 06/08 EN
Parameter/Condition
Operating one bank active-precharge current:
(I
commands; Address bus inputs are switching; Data bus inputs are switching
Operating one bank active-read-precharge current: I
BL = 4, CL = CL (I
(I
Address bus inputs are switching; Data pattern is same as I
Precharge power-down current: All device banks idle;
is LOW; Other control and address bus inputs are stable; Data bus inputs are
floating
Precharge quiet standby current: All device banks idle;
CKE is HIGH, S# is HIGH; Other control and address bus inputs are stable; Data
bus inputs are floating
Precharge standby current: All device banks idle;
HIGH, S# is HIGH; Other control and address bus inputs are switching; Data
bus inputs are switching
Active power-down current: All device banks open;
t
inputs are stable; Data bus inputs are floating
Active standby current: All device banks open;
MAX (I
Other control and address bus inputs are switching; Data bus inputs are
switching
Operating burst write current: All device banks open; Continuous burst
writes; BL = 4, CL = CL (I
t
inputs are switching; Data bus inputs are switching
Operating burst read current: All device banks open; Continuous burst
reads, I
MAX (I
Address bus inputs are switching; Data bus inputs are switching
Burst refresh current:
interval; CKE is HIGH, S# is HIGH between valid commands; Other control and
address bus inputs are switching; Data bus inputs are switching
Self refresh current: CK and CK# at 0V; CKE ≤ 0.2V; Other control and
address bus inputs are floating; Data bus inputs are floating
Operating bank interleave read current: All device banks interleaving
reads, I
t
is HIGH between valid commands; Address bus inputs are stable during
DESELECTs; Data bus inputs are switching
CK =
RP =
CK (I
DD
DD
),
),
DD
t
t
t
t
RP (I
RAS =
RCD =
CK (I
DD
DD
OUT
OUT
),
),
),
t
RC =
DD
DD
t
= 0mA; BL = 4, CL = CL (I
t
= 0mA; BL = 4, CL = CL (I
RP =
RP =
t
t
); CKE is HIGH, S# is HIGH between valid commands; Address bus
RAS MIN (I
DDR2 I
Values shown for MT47H64M8 DDR2 SDRAM only and are computed from values specified in the 512Mb
(64 Meg x 8) component data sheet.
RCD (I
); CKE is LOW; Other control and address bus
t
RC (I
DD
t
t
RP (I
RP (I
Notes:
), AL = 0;
DD
DD
DD
DD
DD
); CKE is HIGH, S# is HIGH between valid commands;
),
DD
DD
t
); CKE is HIGH, S# is HIGH between valid commands;
); CKE is HIGH, S# is HIGH between valid commands;
CK =
t
Specifications and Conditions (Die Revision E) – 1GB
RRD =
), AL = 0;
); CKE is HIGH, S# is HIGH between valid
1. Value calculated as one module rank in this operating condition; all other module ranks in
2. Value calculated reflects all module ranks in this operating condition
t
CK =
t
CK (I
I
DD
t
256MB, 512MB, 1GB (x72, SR): 240-Pin DDR2 SDRAM VLP RDIMM
RRD (I
2P (CKE LOW) mode
t
CK (I
DD
DD
DD
t
CK =
); REFRESH command at every
), AL = 0;
), AL =
DD
DD
t
),
),
CK (I
t
t
RCD =
RC =
t
RCD (I
DD
t
CK =
),
t
t
RC (I
CK =
t
t
RCD (I
t
DD
RAS =
CK =
t
CK =
t
CK (I
) - 1 ×
DD
t
CK (I
t
),
t
DD
OUT
CK (I
CK =
t
t
DD
DD
t
CK (I
RAS MAX (I
t
CK =
12
); CKE is HIGH, S#
RAS =
t
4W
DD
),
CK (I
Fast PDN exit
MR[12] = 0
Slow PDN exit
MR[12] = 1
= 0mA;
DD
t
t
),
DD
RAS =
CK (I
t
),
t
CK (I
RAS =
DD
); CKE is
t
t
RAS MIN
RC =
t
RFC (I
);
DD
Micron Technology, Inc., reserves the right to change products or specifications without notice.
DD
t
t
DD
RAS
CK =
); CKE
t
);
t
RAS
),
RC
DD
)
Symbol
I
I
I
I
I
I
I
DD
DD
DD
DD
I
I
DD
DD
DD
I
I
I
DD
DD
DD
DD
DD
4W
2Q
2N
3N
2P
3P
4R
0
1
5
6
7
1
1
2
2
1
2
2
2
2
1
2
1
Electrical Specifications
1,098
1,260
1,818
1,908
4,140
2,763
-80E
963
126
900
990
720
216
126
©2006 Micron Technology, Inc. All rights reserved.
1,008
1,170
1,593
1,683
3,240
2,223
-667
873
126
810
900
630
216
126
1,323
1,368
3,060
2,088
-53E
783
918
126
720
810
540
216
990
126
1,098
1,098
2,970
2,043
-40E
783
873
126
630
720
450
216
810
126