MT9VDDT6472PHY-335F2 Micron Technology Inc, MT9VDDT6472PHY-335F2 Datasheet - Page 21

• Manufacturer Part Number: MT9VDDT6472PHY-335F2
• Description: MODULE DDR SDRAM 512MB 200SODIMM
• Manufacturer: Micron Technology Inc
• Series: -r

Specifications of MT9VDDT6472PHY-335F2

• Main Category: DRAM Module
• Sub-category: DDR SDRAM
• Module Type: 200SODIMM
• Device Core Size: 72b
• Organization: 64Mx72
• Total Density: 512MByte
• Chip Density: 512Mb
• Access Time (max): 700ps
• Maximum Clock Rate: 333MHz
• Operating Supply Voltage (typ): 2.5V
• Operating Current: 1.4A
• Number Of Elements: 9
• Operating Supply Voltage (max): 2.7V
• Operating Supply Voltage (min): 2.3V
• Operating Temp Range: 0C to 70C
• Operating Temperature Classification: Commercial
• Pin Count: 200
• Mounting: Socket
• Memory Type: DDR SDRAM
• Memory Size: 512MB
• Speed: 333MT/s
• Features: -
• Package / Case: 200-SODIMM
• Lead Free Status / Rohs Status: Compliant

pdf: 09005aef808ffe58, source: 09005aef808ffdc7
DD9C16_32_64_128x72PHG.fm - Rev. B 9/04 EN
30.
31. READs and WRITEs with auto precharge are not
32. Any positive glitch must be less than 1/3 of the
33. Normal Output Drive Curves:
160
140
120
100
80
60
40
20
b. The variation in driver pull-down current within
d. The variation in driver pull-up current within
c. The full variation in driver pull-up current from
e. The full variation in the ratio of the maximum to
Figure 8: Pull-Down Characteristics
0
0.0
t
minimum actually applied to the device CK and
CK# inputs, collectively during bank active.
allowed to be issued until
fied prior to the internal precharge command
being issued.
clock and not more than +400mV or 2.9V, which-
ever is less. Any negative glitch must be less than
1/3 of the clock cycle and not exceed either -
300mV or 2.2V, whichever is more positive.
a. The full variation in driver pull-down current
HP min is the lesser of
nominal limits of voltage and temperature is
expected, but not guaranteed, to lie within the
inner bounding lines of the V-I curve of Figure 8,
Pull-Down Characteristics.
minimum to maximum process, temperature
and voltage will lie within the outer bounding
lines of the V-I curve of Figure 9, Pull-Up Char-
acteristics
nominal limits of voltage and temperature is
expected, but not guaranteed, to lie within the
inner bounding lines of the V-I curve of Figure 9,
Pull-Up Characteristics.
minimum pull-up and pull-down current
should be between 0.71 and 1.4, for device
from minimum to maximum process, temper-
ature and voltage will lie within the outer
bounding lines of the V-I curve of Figure 8,
Pull-Down Characteristics.
0.5
1.0
V
V
OUT
OUT
(V)
(V)
t
CL minimum and t
t
RAS(min) can be satis-
1.5
128MB, 256MB, 512MB, 1GB (x72, ECC, PLL, SR)
2.0
Minimum
t
CH
2.5
21
34. The voltage levels used are derived from a mini-
35. V
36. V
37.
38.
39. During initialization, V
40. The current Micron part operates below the slow-
-100
-120
-140
-160
-180
-200
-20
-40
-60
-80
f. The full variation in the ratio of the nominal
0
200-PIN DDR SDRAM SODIMM
0.0
mum V
practice, the voltage levels obtained from a prop-
erly terminated bus will provide significantly dif-
ferent voltage values.
pulse width
greater than 1/3 of the cycle rate. V
V
pulse width can not be greater than 1/3 of the
cycle rate.
t
t
over
t
referenced to a specific voltage level but specify
when the device output is no longer driving
(
be equal to or less than V
V
even if V
of 42 of series resistance is used between the V
supply and the input pin.
est JEDEC operating frequency of 83 MHz. As
such, future die may not reflect this option.
Figure 9: Pull-Up Characteristics
HZ (MAX) will prevail over
RPST (MAX) condition.
RPST end point and
t
Micron Technology, Inc., reserves the right to change products or specifications without notice.
IH
IL
DD
RPST), or begins driving (
TT
drain-to-source voltages from 0.1V to 1.0V, and
at the same voltage and temperature.
pull-up to pull-down current should be unity
±10 percent, for device drain-to-source voltages
from 0.1V to 1.0V.
(MIN) = -1.5V for a pulse width
and V
may be 1.35V maximum during power up,
t
overshoot: V
DQSCK (MIN) +
DD
DD
0.5
DD
level and the referenced test load. In
/V
Q must track each other.
3ns and the pulse width can not be
DD
Q are 0Vs, provided a minimum
IH
1.0
(MAX) = V
V
DD
t
Q - V
RPRE (MAX) condition.
t
RPRE begin point are not
DD
©2004 Micron Technology, Inc. All rights reserved.
OUT
DD
t
Q, V
t
LZ (MIN) will prevail
(V)
RPRE).
1.5
+ 0.3V. Alternatively,
TT
t
DQSCK (MAX) +
DD
, and V
Q + 1.5V for a
IL
ADVANCE
undershoot:
3ns and the
2.0
REF
must
TT
2.5