MT48LC2M32B2P-6:G Micron Technology Inc, MT48LC2M32B2P-6:G Datasheet - Page 49

IC, SDRAM, 64MBIT, 166MHZ, TSOP-86

MT48LC2M32B2P-6:G

Manufacturer Part Number
MT48LC2M32B2P-6:G
Description
IC, SDRAM, 64MBIT, 166MHZ, TSOP-86
Manufacturer
Micron Technology Inc
Type
SDRAMr
Series
-r
Datasheets

Specifications of MT48LC2M32B2P-6:G

Organization
2Mx32
Density
64Mb
Address Bus
13b
Access Time (max)
17/7.5/5.5ns
Maximum Clock Rate
166MHz
Operating Supply Voltage (typ)
3.3V
Package Type
TSOP-II
Operating Temp Range
0C to 70C
Operating Supply Voltage (max)
3.6V
Operating Supply Voltage (min)
3V
Supply Current
180mA
Pin Count
86
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Memory Type
DRAM - Sychronous
Access Time
5.5ns
Page Size
64Mbit
Memory Case Style
TSOP
No. Of Pins
86
Operating Temperature Range
0°C To +70°C
Frequency
166MHz
Supply Voltage
3.3V
Format - Memory
RAM
Memory Size
64M (2Mx32)
Speed
167MHz
Interface
Parallel
Voltage - Supply
3 V ~ 3.6 V
Operating Temperature
0°C ~ 70°C
Package / Case
86-TFSOP (0.400", 10.16mm Width)
Filter Terminals
SMD
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Compliant
Lead Free Status / RoHS Status
Compliant, Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MT48LC2M32B2P-6:G
Quantity:
106
Part Number:
MT48LC2M32B2P-6:G
Manufacturer:
MICRON
Quantity:
20 000
PDF: 09005aef80725c0b/Source: 09005aef806fc13c
64MSDRAM_2.fm - Rev. M 10/07 EN
22. V
23. The clock frequency must remain constant (stable clock is defined as a signal cycling
24. Auto precharge mode only. The precharge timing budget (
25. Precharge mode only.
26. JEDEC and PC100 specify three clocks.
27.
28. Parameter guaranteed by design.
29. PC100 specifies a maximum of 4pF.
30. PC100 specifies a maximum of 5pF.
31. PC100 specifies a maximum of 6.5pF.
32. For -75, CL = 3 and
33. CKE is HIGH during refresh command period
34. The -6 speed grade does not support CL = 2.
cannot be greater than one-third of the cycle rate. V
a pulse width ≤ 3ns.
within timing constraints specified for the clock pin) during access or precharge
states (READ, WRITE, including
used to reduce the data rate.
7ns after the first clock delay, after the last WRITE is executed.
t
t
limit is actually a nominal value and does not result in a fail value.
AC for -75/-7E at CL = 3 with no load is 4.6ns and is guaranteed by design.
CK = 6ns.
IH
overshoot: V
IH
(MAX) = V
t
CK = 7.5ns; for -7E, CL = 2 and
49
DD
Q + 2V for a pulse width ≤ 3ns, and the pulse width
t
WR, and PRECHARGE commands). CKE may be
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t
RFC (MIN) else CKE is LOW. The I
t
CK = 7.5ns; for -6, CL = 3 and
IL
64Mb: x4, x8, x16 SDRAM
undershoot: V
t
RP) begins 6ns/7ns/7.5ns/
©2000 Micron Technology, Inc. All rights reserved.
IL
(MIN) = –2V for
Notes
DD
6

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