N25Q128A13BF840E NUMONYX, N25Q128A13BF840E Datasheet - Page 81

• Manufacturer Part Number: N25Q128A13BF840E
• Description: 128MBQUAD IO,XIP VDFPN 8X6 3VT&R
• Manufacturer: NUMONYX

9.1.3
DQ0
DQ1
S
C
instruction, while an Erase, Program or Write cycle is in progress, is rejected without having
any effects on the cycle that is in progress.
Figure 11. Read Data Bytes instruction and data-out sequence
Read Data Bytes at Higher Speed (FAST_READ)
The device is first selected by driving Chip Select (S) Low. The instruction code for the Read
Data Bytes at Higher Speed (FAST_READ) instruction is followed by a 3-byte address (A23-
A0) and a dummy byte, each bit being latched-in during the rising edge of Serial Clock (C).
Then the memory contents, at that address, are shifted out on Serial Data output (DQ1) at a
maximum frequency fC, during the falling edge of Serial Clock (C).
The first byte addressed can be at any location. The address is automatically incremented
to the next higher address after each byte of data is shifted out. The whole memory can,
therefore, be read with a single Read Data Bytes at Higher Speed (FAST_READ)
instruction. When the highest address is reached, the address counter rolls over to
000000h, allowing the read sequence to be continued indefinitely.
The Read Data Bytes at Higher Speed (FAST_READ) instruction is terminated by driving
Chip Select (S) High. Chip Select (S) can be driven High at any time during data output. Any
Read Data Bytes at Higher Speed (FAST_READ) instruction, while an Erase, Program or
Write cycle is in progress, is rejected without having any effects on the cycle that is in
progress.
0
1
High Impedance
2
Instruction
3
4
5
6
7
MSB
23
8
22 21
9 10
24-bit address
3
28 29 30 31 32 33 34 35
2
(1)
1
0
MSB
7
6
5
Data out 1
4
3
36 37 38
2
1
0
39
AI13736b
7
Data out 2
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