PBR951,215 NXP Semiconductors, PBR951,215 Datasheet - Page 8

TRANSISTOR NPN UHF 100MA SOT23

PBR951,215

Manufacturer Part Number
PBR951,215
Description
TRANSISTOR NPN UHF 100MA SOT23
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PBR951,215

Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
10V
Frequency - Transition
8GHz
Noise Figure (db Typ @ F)
1.3dB ~ 2dB @ 1GHz ~ 2GHz
Power - Max
365mW
Dc Current Gain (hfe) (min) @ Ic, Vce
50 @ 5mA, 6V
Current - Collector (ic) (max)
100mA
Mounting Type
Surface Mount
Dc Current Gain Hfe Max
50 @ 5mA @ 6V
Mounting Style
SMD/SMT
Configuration
Single
Transistor Polarity
NPN
Maximum Operating Frequency
8000 MHz (Typ)
Collector- Emitter Voltage Vceo Max
10 V
Emitter- Base Voltage Vebo
1.5 V
Continuous Collector Current
0.1 A
Power Dissipation
365 mW
Maximum Operating Temperature
+ 175 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gain
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
568-1175-2
934043070215
PBR951 T/R
Philips Semiconductors
APPLICATION INFORMATION
SPICE parameters for the PBR951 die
1998 Aug 10
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
SEQUENCE No.
UHF wideband transistor
(1)
(1)
(1)
(1)
(1)
(1)
IS
BF
NF
VAF
IKF
ISE
NE
BR
NR
VAR
IKR
ISC
NC
RB
IRB
RBM
RE
RC
XTB
EG
XTI
CJE
VJE
MJE
TF
XTF
VTF
ITF
PTF
CJC
VJC
MJC
XCJC
TR
CJS
VJS
MJS
FC
PARAMETER
0.963
102.3
1.002
64.75
841.1
35.77
2.138
90.16
1.000
3.198
25.77
156.6
1.047
6.071
0.000
2.478
0.164
1.315
0.000
1.110
3.000
1.161
600.0
0.394
3.073
10.25
4.599
53.49
0.000
409.9
287.1
0.111
0.104
0.000
0.000
700.0
0.000
0.888
VALUE
fA
V
mA
fA
V
mA
aA
eV
pF
mV
ps
V
mA
deg
fF
mV
ps
F
mV
A
UNIT
8
Notes
1. These parameters have not been extracted, the
2. C
List of components (see Fig.12)
39
40
41
42
C
C
C
L1
L2
L3
L
L
handbook, halfpage
SEQUENCE No.
B
E
be
cb
ce
QL
f
(2)
(2)
c
default values are shown.
capacitance to collector.
= scaling frequency = 1 GHz.
DESIGNATION
B
B
bpb
= 50; QL
Fig.12 Package equivalent circuit SOT23.
, C
C be
L1
bpe
E
; base-bondpad and emitter-bondpad
= 50; QL
L B
C
C
AF
KF
B,E
PARAMETER
bpb
bpe
(f) = QL
B'
7
80
80
0.35
0.17
0.35
0.40
0.83
C cb
E'
E
B,E
VALUE
L3
L E
C'
(f/f
c
);
Product specification
73.00
131.00
1.000
4 x 10
VALUE
fF
fF
fF
nH
nH
nH
nH
nH
PBR951
C
MBC964
16
L2
ce
UNIT
fF
fF
UNIT
C

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