PBR951,215 NXP Semiconductors, PBR951,215 Datasheet

TRANSISTOR NPN UHF 100MA SOT23

PBR951,215

Manufacturer Part Number
PBR951,215
Description
TRANSISTOR NPN UHF 100MA SOT23
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PBR951,215

Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
10V
Frequency - Transition
8GHz
Noise Figure (db Typ @ F)
1.3dB ~ 2dB @ 1GHz ~ 2GHz
Power - Max
365mW
Dc Current Gain (hfe) (min) @ Ic, Vce
50 @ 5mA, 6V
Current - Collector (ic) (max)
100mA
Mounting Type
Surface Mount
Dc Current Gain Hfe Max
50 @ 5mA @ 6V
Mounting Style
SMD/SMT
Configuration
Single
Transistor Polarity
NPN
Maximum Operating Frequency
8000 MHz (Typ)
Collector- Emitter Voltage Vceo Max
10 V
Emitter- Base Voltage Vebo
1.5 V
Continuous Collector Current
0.1 A
Power Dissipation
365 mW
Maximum Operating Temperature
+ 175 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gain
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
568-1175-2
934043070215
PBR951 T/R
Product specification
Supersedes data of 1998 Jun 09
File under Discrete Semiconductors, SC14
book, halfpage
DATA SHEET
PBR951
UHF wideband transistor
DISCRETE SEMICONDUCTORS
M3D088
1998 Aug 10

Related parts for PBR951,215

PBR951,215 Summary of contents

Page 1

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage PBR951 UHF wideband transistor Product specification Supersedes data of 1998 Jun 09 File under Discrete Semiconductors, SC14 M3D088 1998 Aug 10 ...

Page 2

Philips Semiconductors UHF wideband transistor FEATURES Small size Low noise Low distortion High gain Gold metallization ensures excellent reliability. APPLICATIONS Communication and instrumentation systems. DESCRIPTION Silicon NPN transistor in a surface mount 3-pin SOT23 package. The transistor is primarily intended ...

Page 3

Philips Semiconductors UHF wideband transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System IEC 134. SYMBOL PARAMETER V collector-base voltage CBO V collector-emitter voltage CEO V emitter-base voltage EBO I collector current (DC average collector current ...

Page 4

Philips Semiconductors UHF wideband transistor CHARACTERISTICS unless otherwise specified. j SYMBOL PARAMETER DC characteristics V collector-base breakdown voltage (BR)CBO V collector-emitter breakdown (BR)CEO voltage V emitter-base breakdown voltage (BR)EBO I collector-base leakage current CBO I emitter-base ...

Page 5

Philips Semiconductors UHF wideband transistor 400 handbook, halfpage P tot (mW) 300 200 100 100 Fig.2 Power derating as a function of soldering point temperature. 0.8 handbook, halfpage C re (pF) 0.6 0.4 0 ...

Page 6

Philips Semiconductors UHF wideband transistor 20 handbook, halfpage gain (dB) G max MSG GHz Fig.6 Gain as a function of collector current; ...

Page 7

Philips Semiconductors UHF wideband transistor 4 handbook, halfpage (1) F (dB) 3 (2) 2 (3) ( 1000 MHz 2000 MHz. ( ...

Page 8

Philips Semiconductors UHF wideband transistor APPLICATION INFORMATION SPICE parameters for the PBR951 die SEQUENCE No. PARAMETER VAF 5 IKF 6 ISE VAR 11 IKR 12 ISC ...

Page 9

Philips Semiconductors UHF wideband transistor handbook, full pagewidth 180 mA Fig.13 Common emitter input reflection coefficient (S handbook, full pagewidth 180 ...

Page 10

Philips Semiconductors UHF wideband transistor handbook, full pagewidth 180 mA Fig.15 Common emitter reverse transmission coefficient (S handbook, full pagewidth 180 mA ...

Page 11

Philips Semiconductors UHF wideband transistor handbook, full pagewidth unstable region source 180 GHz mA Fig.17 Common emitter available gain circles; typical values. handbook, ...

Page 12

Philips Semiconductors UHF wideband transistor PACKAGE OUTLINE Plastic surface mounted package; 3 leads DIMENSIONS (mm are the original dimensions UNIT max. 1.1 0.48 0.15 mm 0.1 0.9 0.38 0.09 OUTLINE VERSION ...

Page 13

Philips Semiconductors UHF wideband transistor DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data ...

Page 14

Philips Semiconductors UHF wideband transistor 1998 Aug 10 NOTES 14 Product specification PBR951 ...

Page 15

Philips Semiconductors UHF wideband transistor 1998 Aug 10 NOTES 15 Product specification PBR951 ...

Page 16

Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 160 1010, ...

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