PBR951,215 NXP Semiconductors, PBR951,215 Datasheet - Page 5

• Manufacturer Part Number: PBR951,215
• Description: TRANSISTOR NPN UHF 100MA SOT23
• Manufacturer: NXP Semiconductors

Specifications of PBR951,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 10V
• Frequency - Transition: 8GHz
• Noise Figure (db Typ @ F): 1.3dB ~ 2dB @ 1GHz ~ 2GHz
• Power - Max: 365mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 50 @ 5mA, 6V
• Current - Collector (ic) (max): 100mA
• Mounting Type: Surface Mount
• Dc Current Gain Hfe Max: 50 @ 5mA @ 6V
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 8000 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 10 V
• Emitter- Base Voltage Vebo: 1.5 V
• Continuous Collector Current: 0.1 A
• Power Dissipation: 365 mW
• Maximum Operating Temperature: + 175 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-1175-2; 934043070215; PBR951 T/R

Philips Semiconductors
1998 Aug 10
handbook, halfpage
handbook, halfpage
UHF wideband transistor
Fig.2
I
Fig.4
C
(mW)
= 0; f = 1 MHz.
P tot
(pF)
400
300
200
100
C re
0.8
0.6
0.4
0.2
0
0
0
0
Power derating as a function of soldering
point temperature.
Feedback capacitance as a function of
collector-base voltage; typical values.
50
4
100
8
150
V CB (V)
T s ( C)
MDA887
MDA889
200
12
5
handbook, halfpage
handbook, halfpage
V
Fig.3
V
Fig.5
CE
(GHz)
CE
h FE
f T
120
= 6 V.
= 6 V; f = 1 GHz; T
80
40
10
0
0
8
6
4
2
0
0
DC current gain as a function of collector
current; typical values.
Transition frequency as a function of
collector current; typical values.
10
10
amb
= 25 C.
20
20
30
Product specification
30
40
I C (mA)
I C (mA)
PBR951
MDA888
MDA890
40
50