PBR951,215 NXP Semiconductors, PBR951,215 Datasheet - Page 3

• Manufacturer Part Number: PBR951,215
• Description: TRANSISTOR NPN UHF 100MA SOT23
• Manufacturer: NXP Semiconductors

Specifications of PBR951,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 10V
• Frequency - Transition: 8GHz
• Noise Figure (db Typ @ F): 1.3dB ~ 2dB @ 1GHz ~ 2GHz
• Power - Max: 365mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 50 @ 5mA, 6V
• Current - Collector (ic) (max): 100mA
• Mounting Type: Surface Mount
• Dc Current Gain Hfe Max: 50 @ 5mA @ 6V
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 8000 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 10 V
• Emitter- Base Voltage Vebo: 1.5 V
• Continuous Collector Current: 0.1 A
• Power Dissipation: 365 mW
• Maximum Operating Temperature: + 175 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-1175-2; 934043070215; PBR951 T/R

Philips Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System IEC 134.
Note
1. T
THERMAL CHARACTERISTICS
Note
1. T
1998 Aug 10
V
V
V
I
I
P
T
T
R
SYMBOL
SYMBOL
C
C(AV)
stg
j
CBO
CEO
EBO
tot
th j-s
UHF wideband transistor
s
s
is the temperature at the soldering point of the collector pin.
is the temperature at the soldering point of the collector pin.
collector-base voltage
collector-emitter voltage
emitter-base voltage
average collector current
total power dissipation
storage temperature
junction temperature
thermal resistance from junction
to soldering point; note 1
collector current (DC)
PARAMETER
PARAMETER
open emitter
open base
open collector
T
P
s
tot
= 60 C; note 1
= 365 mW; T
3
CONDITIONS
CONDITIONS
s
= 60 C; note 1
MIN.
65
VALUE
Product specification
315
20
10
1.5
100
100
365
+150
175
MAX.
PBR951
UNIT
K/W
V
V
V
mA
mA
mW
UNIT
C
C