PBR951,215 NXP Semiconductors, PBR951,215 Datasheet - Page 7

• Manufacturer Part Number: PBR951,215
• Description: TRANSISTOR NPN UHF 100MA SOT23
• Manufacturer: NXP Semiconductors

Specifications of PBR951,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 10V
• Frequency - Transition: 8GHz
• Noise Figure (db Typ @ F): 1.3dB ~ 2dB @ 1GHz ~ 2GHz
• Power - Max: 365mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 50 @ 5mA, 6V
• Current - Collector (ic) (max): 100mA
• Mounting Type: Surface Mount
• Dc Current Gain Hfe Max: 50 @ 5mA @ 6V
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 8000 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 10 V
• Emitter- Base Voltage Vebo: 1.5 V
• Continuous Collector Current: 0.1 A
• Power Dissipation: 365 mW
• Maximum Operating Temperature: + 175 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-1175-2; 934043070215; PBR951 T/R

Philips Semiconductors
1998 Aug 10
handbook, halfpage
UHF wideband transistor
V
(1) f = 2000 MHz.
(2) f = 1500 MHz.
Fig.10 Minimum noise figure as a function of
CE
(dB)
= 6 V.
F
4
3
2
1
0
10
1
collector current, typical values.
(1)
(2)
(3)
(5)
(4)
1
(3) f = 1000 MHz.
(4) f = 900 MHz.
(5) f = 500 MHz.
10
I C (mA)
MDA895
10
2
7
handbook, halfpage
V
(1) I
Fig.11 Minimum noise figure as a function of
CE
(dB)
= 6 V.
F
C
4
3
2
1
0
10
= 30 mA.
2
frequency, typical values.
10
(2) I
(3) I
3
C
C
= 15 mA.
= 5 mA.
(1)
(2)
(3)
f (MHz)
Product specification
PBR951
MDA896
10
4