PBR951,215 NXP Semiconductors, PBR951,215 Datasheet - Page 2

• Manufacturer Part Number: PBR951,215
• Description: TRANSISTOR NPN UHF 100MA SOT23
• Manufacturer: NXP Semiconductors

Specifications of PBR951,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 10V
• Frequency - Transition: 8GHz
• Noise Figure (db Typ @ F): 1.3dB ~ 2dB @ 1GHz ~ 2GHz
• Power - Max: 365mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 50 @ 5mA, 6V
• Current - Collector (ic) (max): 100mA
• Mounting Type: Surface Mount
• Dc Current Gain Hfe Max: 50 @ 5mA @ 6V
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 8000 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 10 V
• Emitter- Base Voltage Vebo: 1.5 V
• Continuous Collector Current: 0.1 A
• Power Dissipation: 365 mW
• Maximum Operating Temperature: + 175 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-1175-2; 934043070215; PBR951 T/R

Philips Semiconductors
FEATURES
APPLICATIONS
DESCRIPTION
Silicon NPN transistor in a surface mount 3-pin SOT23
package. The transistor is primarily intended for wideband
applications in the GHz-range in the RF front end of analog
and digital cellular telephones, cordless phones, radar
detectors, pagers and satellite TV-tuners.
QUICK REFERENCE DATA
Note
1. T
1998 Aug 10
C
f
G
F
P
R
T
SYMBOL
Small size
Low noise
Low distortion
High gain
Gold metallization ensures excellent reliability.
Communication and instrumentation systems.
tot
re
th j-s
UHF wideband transistor
UM
s
is the temperature at the soldering point of the collector pin.
feedback capacitance
transition frequency
maximum unilateral power gain
noise figure
total power dissipation
thermal resistance from junction to
soldering point
PARAMETER
I
I
I
f = 1 GHz
f = 1 GHz
T
P
C
C
C
S
s
tot
= 0; V
= 30 mA; V
= 30 mA; V
= 60 C; note 1
=
= 365 mW
opt
2
CB
; I
PINNING - SOT23
handbook, halfpage
C
= 6 V; f = 1 MHz
CONDITIONS
PIN
Marking code: W2.
= 5 mA; V
1
2
3
CE
CE
Top view
= 6 V; f
= 6 V; T
Fig.1 Simplified outline and symbol.
base
emitter
collector
CE
m
1
amb
= 6 V;
= 1 GHz
= 25 C;
3
DESCRIPTION
2
0.4
8
14
1.3
TYP.
MAM255
Product specification
1
365
315
MAX.
PBR951
3
2
pF
GHz
dB
dB
mW
K/W
UNIT