NTHD3102CT1G ON Semiconductor, NTHD3102CT1G Datasheet - Page 8

• Manufacturer Part Number: NTHD3102CT1G
• Description: MOSFET N/P-CH COMPL 20V CHIPFET
• Manufacturer: ON Semiconductor

Specifications of NTHD3102CT1G

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 45 mOhm @ 4.4A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 4A, 3.1A
• Vgs(th) (max) @ Id: 1.2V @ 250µA
• Gate Charge (qg) @ Vgs: 7.9nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 510pF @ 10V
• Power - Max: 1.1W
• Mounting Type: Surface Mount
• Package / Case: 8-ChipFET™
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NTHD3102CT1G; NTHD3102CT1GOSTR

−0.1
−0.2
−0.3
−0.4
0.2
0.1
5
4
3
2
1
0
0
−50
0
Drain−to−Source Voltage vs. Total Charge
−25
Figure 18. Gate−to−Source and
Q
T
Figure 20. Threshold Voltage
J
g
, JUNCTION TEMPERATURE (°C)
2
, TOTAL GATE CHARGE (nC)
0
25
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
4
800
600
400
200
50
TYPICAL P−CHANNEL PERFORMANCE CURVES
0
0
C
75
RSS
C
C
Figure 22. Capacitance Variation
OSS
I
100
I
T
6
D
D
ISS
4
(T
J
= −250 mA
= −3.2 A
= 25°C
J
= 25°C unless otherwise noted)
125
http://onsemi.com
NTHD3102C
8
150
8
8
0.01
100
0.1
12
10
10
1
Figure 19. Diode Forward Voltage vs. Current
1
0.2
1
Figure 21. Resistive Switching Time Variation
T
V
T
J
J
GS
−V
= 125°C
t
= 25°C
t
d(on)
d(off)
SD
= 0 V
16
T
V
t
t
f
, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
r
J
GS
= 25°C
R
0.4
= 0 V
G
, GATE RESISTANCE (OHMS)
vs. Gate Resistance
20
0.6
10
T
J
= 25°C
0.8
V
I
V
D
DS
GS
= −4.2 A
= −10 V
= −4.5 V
100
1.0