NTHD3102CT1G ON Semiconductor, NTHD3102CT1G Datasheet - Page 2

• Manufacturer Part Number: NTHD3102CT1G
• Description: MOSFET N/P-CH COMPL 20V CHIPFET
• Manufacturer: ON Semiconductor

Specifications of NTHD3102CT1G

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 45 mOhm @ 4.4A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 4A, 3.1A
• Vgs(th) (max) @ Id: 1.2V @ 250µA
• Gate Charge (qg) @ Vgs: 7.9nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 510pF @ 10V
• Power - Max: 1.1W
• Mounting Type: Surface Mount
• Package / Case: 8-ChipFET™
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NTHD3102CT1G; NTHD3102CT1GOSTR

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
2. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces).
3. Surface−mounted on FR4 board using the minimum recommended pad size (Cu area = TBD in sq).
4. Switching characteristics are independent of operating junction temperatures.
MAXIMUM RATINGS
THERMAL RESISTANCE RATINGS
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
N−Channel
Continuous Drain Current (Note 3)
P−Channel
Continuous Drain Current (Note 3)
Power Dissipation (Note 3)
Pulsed Drain Current
Operating Junction and Storage Temperature
Source Current (Body Diode)
Lead Temperature for Soldering Purposes (1/8″ from case for 10 seconds)
Junction−to−Ambient − Steady State (Note 2)
Junction−to−Ambient − t ≤ 5 s (Note 2)
Junction−to−Ambient − Steady State (Note 3)
Drain−to−Source Breakdown Voltage
(Note 4)
Drain−to−Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
Parameter
(continued) (T
J
V
= 25°C unless otherwise noted)
(T
V
(BR)DSS
Symbol
(BR)DSS
J
Parameter
Parameter
I
I
GSS
DSS
= 25°C unless otherwise noted)
/T
J
N/P
N
P
N
P
N
P
N
P
N
P
http://onsemi.com
NTHD3102C
V
V
V
V
GS
GS
GS
GS
2
= 0 V, V
= 0 V, V
= 0 V, V
= 0 V, V
V
V
V
GS
DS
DS
Steady
Steady
N−Ch
P−Ch
State
State
= 0 V
Test Conditions
DS
DS
= 0 V, V
= 0 V, V
DS
DS
= −16 V
= −16 V
= 16 V
= 16 V
GS
GS
T
T
T
T
T
tp = 10 ms
= ±8.0 V
= ±8.0 V
A
A
A
A
A
= 25°C
= 85°C
= 25°C
= 85°C
= 25°C
I
I
D
D
T
T
= −250 mA
J
J
= 250 mA
= 25 °C
= 85 °C
T
Symbol
Symbol
J
R
, T
I
P
DM
T
I
I
I
qJA
D
D
S
Min
−20
D
L
STG
20
20.2
16.2
Typ
−55 to 150
Value
12.6
Max
260
110
195
3.0
2.2
2.3
1.7
0.6
1.7
16
60
±100
±100
Max
−1.0
−5.0
1.0
5.0
mV/°C
°C/W
Unit
Unit
Unit
°C
°C
W
mA
nA
A
A
A
A
V