NTHD3102CT1G ON Semiconductor, NTHD3102CT1G Datasheet

MOSFET N/P-CH COMPL 20V CHIPFET

NTHD3102CT1G

Manufacturer Part Number
NTHD3102CT1G
Description
MOSFET N/P-CH COMPL 20V CHIPFET
Manufacturer
ON Semiconductor
Datasheet

Specifications of NTHD3102CT1G

Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
45 mOhm @ 4.4A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
4A, 3.1A
Vgs(th) (max) @ Id
1.2V @ 250µA
Gate Charge (qg) @ Vgs
7.9nC @ 4.5V
Input Capacitance (ciss) @ Vds
510pF @ 10V
Power - Max
1.1W
Mounting Type
Surface Mount
Package / Case
8-ChipFET™
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
NTHD3102CT1G
NTHD3102CT1GOSTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NTHD3102CT1G
Manufacturer:
ON/安森美
Quantity:
20 000
Part Number:
NTHD3102CT1G
0
Company:
Part Number:
NTHD3102CT1G
Quantity:
54 000
NTHD3102C
Power MOSFET
Complementary, 20 V, +5.5 A /−4.2 A,
ChipFETt
Features
Applications
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using 1 in sq pad size
© Semiconductor Components Industries, LLC, 2006
September, 2006 − Rev. 2
MAXIMUM RATINGS
Drain−to−Source Voltage
Gate−to−Source Voltage
N−Channel
Continuous Drain
Current (Note 1)
P−Channel
Continuous Drain
Current (Note 1)
Power Dissipation
(Note 1)
Gate−to−Source ESD Rating −
Powered Products
Complementary N−Channel and P−Channel MOSFET
Small Size, 40% Smaller than TSOP−6 Package
Leadless SMD Package Provides Great Thermal Characteristics
Leading Edge Trench Technology for Low On Resistance
Reduced Gate Charge to Improve Switching Response
This is a Pb−Free Device
DC−DC Conversion Circuits
Load/Power Switching
Single or Dual Cell Li−Ion Battery Supplied Devices
Ideal for Power Management Applications in Portable, Battery
(Cu. area = 1.127 in sq [1 oz] including traces).
(Human Body Model, Method 3015)
Parameter
(T
J
Steady
Steady
Steady
t ≤ 5 s
t ≤ 5 s
t ≤ 5 s
State
State
State
= 25°C unless otherwise noted)
N−Ch
P−Ch
T
T
T
T
T
T
T
A
A
A
A
A
A
A
= 25°C
= 85°C
= 25°C
= 25°C
= 85°C
= 25°C
= 25°C
Symbol
V
ESD
V
P
DSS
I
I
GS
D
D
D
Value
"8.0
"8.0
100
4.0
2.9
5.5
3.1
2.2
4.2
1.1
2.1
20
1
Unit
W
V
V
A
A
V
G
See detailed ordering and shipping information in the package
dimensions section on page 9 of this data sheet.
N−Channel
P−Channel
1
V
N−Channel MOSFET
PIN CONNECTIONS
(BR)DSS
−20 V
D
D
D
D
20 V
1
1
2
2
(Bottom View)
8
7
6
5
ORDERING INFORMATION
D
D6 = Specific Device Code
M
G
1
http://onsemi.com
= Date Code
= Pb−Free Package
S
105 mW @ 1.8 V
29 mW @ 4.5 V
37 mW @ 2.5 V
48 mW @ 1.8 V
64 mW @ 4.5 V
83 mW @ 2.5 V
1
R
1
2
3
4
DS(on)
S
G
S
G
1
2
1
2
Publication Order Number:
TYP
G
2
P−Channel MOSFET
1
2
3
4
CASE 1206A
ChipFET
STYLE 2
MARKING
DIAGRAM
(Top View)
NTHD3102C/D
S 2
(Note 1)
I
D
−4.2 A
5.5 A
MAX
D
2
8
7
6
5

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NTHD3102CT1G Summary of contents

Page 1

NTHD3102C Power MOSFET Complementary +5.5 A /−4.2 A, ChipFETt Features • Complementary N−Channel and P−Channel MOSFET • Small Size, 40% Smaller than TSOP−6 Package • Leadless SMD Package Provides Great Thermal Characteristics • Leading Edge Trench Technology for ...

Page 2

MAXIMUM RATINGS (continued N−Channel Continuous Drain Current (Note 3) P−Channel Continuous Drain Current (Note 3) Power Dissipation (Note 3) Pulsed Drain Current Operating Junction and Storage Temperature Source Current (Body Diode) Lead Temperature for Soldering Purposes (1/8″ from ...

Page 3

ELECTRICAL CHARACTERISTICS Parameter ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Drain−to−Source On Resistance Forward Transconductance CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Threshold Gate Charge Gate−to−Source Charge Gate−to−Drain Charge SWITCHING CHARACTERISTICS (Note ...

Page 4

ELECTRICAL CHARACTERISTICS Parameter DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge NTHD3102C (continued 25°C unless otherwise noted) J Symbol N/P Test Conditions ° ...

Page 5

TYPICAL N−CHANNEL PERFORMANCE CURVES DRAIN−TO−SOURCE VOLTAGE (VOLTS) DS Figure 1. On−Region Characteristics 0. 4.5 ...

Page 6

TYPICAL N−CHANNEL PERFORMANCE CURVES TOTAL GATE CHARGE (nC) g Figure 7. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge 0.2 0.1 0 −0.1 −0.2 −0.3 −0.4 −50 − ...

Page 7

TYPICAL P−CHANNEL PERFORMANCE CURVES − − − −V , DRAIN−TO−SOURCE VOLTAGE (VOLTS) DS Figure 12. On−Region Characteristics 0 −4.5 ...

Page 8

TYPICAL P−CHANNEL PERFORMANCE CURVES TOTAL GATE CHARGE (nC) g Figure 18. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge 0.2 0.1 0 −0.1 −0.2 −0.3 −0.4 −50 − ...

Page 9

... Single Pulse 0.01 −4 − ORDERING INFORMATION Device NTHD3102CT1G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. NTHD3102C TYPICAL PERFORMANCE CURVES (T = 25°C unless otherwise noted) J −2 − ...

Page 10

... SCALE 20:1 0.026 Basic *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. NTHD3102C PACKAGE DIMENSIONS ChipFET] CASE 1206A−03 ISSUE G NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. ...

Page 11

... Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303− ...

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